Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy

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dc.contributorVirginia Techen
dc.contributor.authorHudait, Mantu K.en
dc.contributor.authorZhu, Y.en
dc.contributor.authorJohnston, Steve W.en
dc.contributor.authorMaurya, Deepamen
dc.contributor.authorPriya, Shashanken
dc.contributor.authorUmbel, Rachelen
dc.contributor.departmentElectrical and Computer Engineeringen
dc.contributor.departmentCenter for Energy Harvesting Materials and Systems (CEHMS)en
dc.contributor.departmentMechanical Engineeringen
dc.contributor.departmentMaterials Science and Engineeringen
dc.date.accessed2014-01-10en
dc.date.accessioned2014-01-21T19:28:04Zen
dc.date.available2014-01-21T19:28:04Zen
dc.date.issued2013-03-01en
dc.description.abstractGaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendellosung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 mu m GaAs/(100) GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 mu s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4794984]en
dc.description.sponsorshipIntel Corporationen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationHudait, M. K.; Zhu, Y.; Johnston, S. W.; et al., "Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy," Appl. Phys. Lett. 102, 093119 (2013); http://dx.doi.org/10.1063/1.4794984en
dc.identifier.doihttps://doi.org/10.1063/1.4794984en
dc.identifier.issn0003-6951en
dc.identifier.urihttp://hdl.handle.net/10919/24925en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/102/9/10.1063/1.4794984en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectMinority-carrier lifetimeen
dc.subjectElectronic-structureen
dc.subjectGaasen
dc.subjectGEen
dc.subjectSIen
dc.subjectCellsen
dc.subjectInterfacesen
dc.subjectImpacten
dc.subjectPhysicsen
dc.titleUltra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxyen
dc.title.serialApplied Physics Lettersen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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