Programmable quantum emitter formation in silicon

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dc.contributor.authorJhuria, K.en
dc.contributor.authorIvanov, V.en
dc.contributor.authorPolley, D.en
dc.contributor.authorZhiyenbayev, Y.en
dc.contributor.authorLiu, W.en
dc.contributor.authorPersaud, A.en
dc.contributor.authorRedjem, W.en
dc.contributor.authorQarony, W.en
dc.contributor.authorParajuli, P.en
dc.contributor.authorJi, Q.en
dc.contributor.authorGonsalves, A. J.en
dc.contributor.authorBokor, J.en
dc.contributor.authorTan, L. Z.en
dc.contributor.authorKante, B.en
dc.contributor.authorSchenkel, T.en
dc.date.accessioned2025-01-13T13:01:24Zen
dc.date.available2025-01-13T13:01:24Zen
dc.date.issued2024-05-27en
dc.date.issued2024-05-27en
dc.description.abstractSilicon-based quantum emitters are candidates for large-scale qubit integration due to their single-photon emission properties and potential for spin-photon interfaces with long spin coherence times. Here, we demonstrate local writing and erasing of selected light-emitting defects using femtosecond laser pulses in combination with hydrogen-based defect activation and passivation at a single center level. By choosing forming gas (N2/H2) during thermal annealing of carbon-implanted silicon, we can select the formation of a series of hydrogen and carbon-related quantum emitters, including T and Ci centers while passivating the more common G-centers. The Ci center is a telecom S-band emitter with promising optical and spin properties that consists of a single interstitial carbon atom in the silicon lattice. Density functional theory calculations show that the Ci center brightness is enhanced by several orders of magnitude in the presence of hydrogen. Fs-laser pulses locally affect the passivation or activation of quantum emitters with hydrogen for programmable formation of selected quantum emitters.en
dc.description.versionPublished versionen
dc.format.extent8 page(s)en
dc.format.mimetypeapplication/pdfen
dc.identifierARTN 4497 (Article number)en
dc.identifier.doihttps://doi.org/10.1038/s41467-024-48714-2en
dc.identifier.eissn2041-1723en
dc.identifier.issn2041-1723en
dc.identifier.issue1en
dc.identifier.orcidIvanov, Vsevolod [0000-0002-7285-2603]en
dc.identifier.other10.1038/s41467-024-48714-2 (PII)en
dc.identifier.pmid38802357en
dc.identifier.urihttps://hdl.handle.net/10919/124160en
dc.identifier.volume15en
dc.language.isoenen
dc.publisherNature Portfolioen
dc.relation.urihttps://www.ncbi.nlm.nih.gov/pubmed/38802357en
dc.relation.urihttps://doi.org/10.1038/s41467-024-48714-2en
dc.rightsCreative Commons Attribution 4.0 Internationalen
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.subjectMultidisciplinary Sciencesen
dc.subject- Other Topicsen
dc.subjectINTERSTITIAL CARBONen
dc.subjectDEFECTSen
dc.subjectHYDROGENen
dc.subjectCENTERSen
dc.subjectDIAMONDen
dc.subject5108 Quantum Physicsen
dc.subject51 Physical Sciencesen
dc.titleProgrammable quantum emitter formation in siliconen
dc.title.serialNature Communicationsen
dc.typeArticleen
dc.type.dcmitypeTexten
dc.type.otherArticleen
dc.type.otherJournalen
dcterms.dateAccepted2024-05-07en
pubs.organisational-groupVirginia Techen
pubs.organisational-groupVirginia Tech/All T&R Facultyen
pubs.organisational-groupVirginia Tech/University Research Institutesen
pubs.organisational-groupVirginia Tech/University Research Institutes/Virginia Tech National Security Instituteen

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