Wideband characterization of aluminum nitride substrates and high power-high frequency thick film applications

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dc.contributor.authorFarzanehfard, Hoseinen
dc.contributor.committeechairElshabini-Riad, Aicha A.en
dc.contributor.committeememberJohnson, Lee W.en
dc.contributor.committeememberRahman, Saifuren
dc.contributor.committeememberRiad, Sedki Mohameden
dc.contributor.committeememberSafaai-Jazi, Ahmaden
dc.contributor.departmentElectrical Engineeringen
dc.date.accessioned2014-03-14T21:20:54Zen
dc.date.adate2005-10-12en
dc.date.available2014-03-14T21:20:54Zen
dc.date.issued1992-04-15en
dc.date.rdate2005-10-12en
dc.date.sdate2005-10-12en
dc.description.abstractCeramic substrates play an important role in thick film hybrid microelectronic circuits. Existing substrates such as alumina and beryllia do not meet satisfactorily the desired requirements. The newly developed aluminum nitride (<i>AIN</i>) substrate shows a great deal of promise and potentially embraces the best qualities of alumina and beryllia. The objective of this dissertation is to study the electrical properties, thick film interaction, and environmental effects on <i>AIN</i> substrates, and also to examine the performance of this material for high power - high frequency hybrid thick film applications. In particular, wideband dielectric constant measurements of A1N and other ceramic substrates are performed, oxidization and humidity effects on surface properties of <i>AIN</i> are addressed, and short and long term aging effects on several circuit parameters are studied. To evaluate the performance of <i>AIN</i> in high power and high frequency applications, two circuits; an impulse generator and a power converter, are realized, tested and compared with those on alumina substrates. The thick film circuits realized on <i>AIN</i> perform considerably better than those on alumina.en
dc.description.degreePh. D.en
dc.format.extentxv, 192 leavesen
dc.format.mediumBTDen
dc.format.mimetypeapplication/pdfen
dc.identifier.otheretd-10122005-134447en
dc.identifier.sourceurlhttp://scholar.lib.vt.edu/theses/available/etd-10122005-134447/en
dc.identifier.urihttp://hdl.handle.net/10919/39788en
dc.language.isoenen
dc.publisherVirginia Techen
dc.relation.haspartLD5655.V856_1992.F379.pdfen
dc.relation.isformatofOCLC# 26554369en
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subject.lccLD5655.V856 1992.F379en
dc.subject.lcshAluminum nitrateen
dc.subject.lcshThick filmsen
dc.titleWideband characterization of aluminum nitride substrates and high power-high frequency thick film applicationsen
dc.typeDissertationen
dc.type.dcmitypeTexten
thesis.degree.disciplineElectrical Engineeringen
thesis.degree.grantorVirginia Polytechnic Institute and State Universityen
thesis.degree.leveldoctoralen
thesis.degree.namePh. D.en

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