The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor
TR Number
Date
2010-07-01
Journal Title
Journal ISSN
Volume Title
Publisher
AIP Publishing
Abstract
Description
Keywords
Alumina, Annealing, Energy gap, Gallium arsenide, III-V semiconductors, Indium compounds, Interface states, MOS capacitors, Surface treatments, X-ray photoelectron spectra, al2o3, Physics
Citation
Trinh, H. D.; Chang, E. Y.; Wu, P. W.; et al., "The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor," Appl. Phys. Lett. 97, 042903 (2010); http://dx.doi.org/10.1063/1.3467813