The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor

TR Number

Date

2010-07-01

Journal Title

Journal ISSN

Volume Title

Publisher

AIP Publishing

Abstract

Description

Keywords

Alumina, Annealing, Energy gap, Gallium arsenide, III-V semiconductors, Indium compounds, Interface states, MOS capacitors, Surface treatments, X-ray photoelectron spectra, al2o3, Physics

Citation

Trinh, H. D.; Chang, E. Y.; Wu, P. W.; et al., "The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor," Appl. Phys. Lett. 97, 042903 (2010); http://dx.doi.org/10.1063/1.3467813