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The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor

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dc.contributorVirginia Techen
dc.contributor.authorTrinh, H. D.en
dc.contributor.authorChang, E. Y.en
dc.contributor.authorWu, P. W.en
dc.contributor.authorWong, Y. Y.en
dc.contributor.authorChang, C. T.en
dc.contributor.authorHsieh, Y. F.en
dc.contributor.authorYu, C. C.en
dc.contributor.authorNguyen, H. Q.en
dc.contributor.authorLin, Y. C.en
dc.contributor.authorLin, K. L.en
dc.contributor.authorHudait, Mantu K.en
dc.contributor.departmentElectrical and Computer Engineeringen
dc.date.accessed2014-01-17en
dc.date.accessioned2014-01-28T18:00:17Zen
dc.date.available2014-01-28T18:00:17Zen
dc.date.issued2010-07-01en
dc.description.abstractThe inversion behaviors of atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors are studied by various surface treatments and postdeposition annealing using different gases. By using the combination of wet sulfide and dry trimethyl aluminum surface treatment along with pure hydrogen annealing, a strong inversion capacitance-voltage (C-V) response is observed, indicating a remarkable reduction in interface trap state density (D-it) at lower half-part of In0.53Ga0.47As band gap. This low D-it was confirmed by the temperature independent C-V stretch-out and horizontal C-V curves. The x-ray photoelectron spectroscopy spectra further confirm the effectiveness of hydrogen annealing on the reduction of native oxides. (C) 2010 American Institute of Physics. [doi:10.1063/1.3467813]en
dc.description.sponsorshipTaiwan National Science Council_NSC97-2221-E-009-156-MY2en
dc.format.mimetypeapplication/pdfen
dc.identifier.citationTrinh, H. D.; Chang, E. Y.; Wu, P. W.; et al., "The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor," Appl. Phys. Lett. 97, 042903 (2010); http://dx.doi.org/10.1063/1.3467813en
dc.identifier.doihttps://doi.org/10.1063/1.3467813en
dc.identifier.issn0003-6951en
dc.identifier.urihttp://hdl.handle.net/10919/25200en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/97/4/10.1063/1.3467813en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectAluminaen
dc.subjectAnnealingen
dc.subjectEnergy gapen
dc.subjectGallium arsenideen
dc.subjectIII-V semiconductorsen
dc.subjectIndium compoundsen
dc.subjectInterface statesen
dc.subjectMOS capacitorsen
dc.subjectSurface treatmentsen
dc.subjectX-ray photoelectron spectraen
dc.subjectal2o3en
dc.subjectPhysicsen
dc.titleThe influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitoren
dc.title.serialApplied Physics Lettersen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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