In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots
dc.contributor.author | Li, Mi-Feng | en |
dc.contributor.author | Yu, Ying | en |
dc.contributor.author | He, Ji-Fang | en |
dc.contributor.author | Wang, Li-Juan | en |
dc.contributor.author | Zhu, Yan | en |
dc.contributor.author | Shang, Xiang-jun | en |
dc.contributor.author | Ni, Hai-Qiao | en |
dc.contributor.author | Niu, Zhi-Chuan | en |
dc.contributor.department | Electrical and Computer Engineering | en |
dc.date.accessioned | 2013-03-13T00:09:34Z | en |
dc.date.available | 2013-03-13T00:09:34Z | en |
dc.date.issued | 2013-02-18 | en |
dc.date.updated | 2013-03-13T00:09:35Z | en |
dc.description.abstract | A method to improve the growth repeatability of low-density InAs/GaAs self-assembled quantum dots by molecular beam epitaxy is reported. A sacrificed InAs layer was deposited firstly to determine in situ the accurate parameters of two- to three-dimensional transitions by observation of reflection high-energy electron diffraction patterns, and then the InAs layer annealed immediately before the growth of the low-density InAs quantum dots (QDs). It is confirmed by micro-photoluminescence that control repeatability of low-density QD growth is improved averagely to about 80% which is much higher than that of the QD samples without using a sacrificed InAs layer. | en |
dc.description.version | Published version | en |
dc.format.mimetype | application/pdf | en |
dc.identifier.citation | Nanoscale Research Letters. 2013 Feb 18;8(1):86 | en |
dc.identifier.doi | https://doi.org/10.1186/1556-276X-8-86 | en |
dc.identifier.uri | http://hdl.handle.net/10919/19283 | en |
dc.language.iso | en | en |
dc.rights | Creative Commons Attribution 4.0 International | en |
dc.rights.holder | Mi-Feng Li et al.; licensee BioMed Central Ltd. | en |
dc.rights.uri | http://creativecommons.org/licenses/by/4.0/ | en |
dc.title | In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots | en |
dc.title.serial | Nanoscale Research Letters | en |
dc.type | Article - Refereed | en |
dc.type.dcmitype | Text | en |
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