Ferroelectric bismuth titanate films by hot wall metalorganic chemical vapor deposition

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Date

1993-06-01

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American Institute of Physics

Abstract

Ferroelectric bismuth titanate thin films were successfully deposited on Si, sapphire disks, and Pt/Ti/SiO2/Si substrates by hot wall metalorganic chemical vapor deposition. Triphenyl bismuth [Bi(C6H5)3] and titanium ethoxide [Ti(C2H5O)4] were used as the precursors. The deposition rates were in the range of 3.9-12.5 nm/min. The Bi/Ti ratio was easily controlled by precursor temperature, carrier gas flow rate, and deposition temperature. As-deposited films were pure Bi4Ti3O12 phase. The films were specular and showed uniform and fine grain size. Optical constants as a function of wavelength, were calculated from the film transmission characteristics in the ultraviolet-visible-near infrared (UV-VIS-NIR) region. The 550-degrees-C annealed film showed a spontaneous polarization of 26.5 muC/cm2 and a coercive field of 244.3 kV/cm.

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Keywords

Thin films, Ferroelectric thin films, Bismuth, Ferroelectric materials, Ferroelectric substrates

Citation

Si, J., Desu, S. B. (1993). Ferroelectric bismuth titanate films by hot wall metalorganic chemical vapor deposition. Journal of Applied Physics, 73(11), 7910-7913. doi: 10.1063/1.353943

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http://hdl.handle.net/10919/52448

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Scholarly Works, Materials Science and Engineering (MSE)