Ferroelectric bismuth titanate films by hot wall metalorganic chemical vapor deposition

dc.contributorVirginia Tech. Department of Materials Science and Engineeringen
dc.contributor.authorSi, Jieen
dc.contributor.authorDesu, Seshu B.en
dc.contributor.departmentMaterials Science and Engineering (MSE)en
dc.date.accessed2015-04-24en
dc.date.accessioned2015-05-21T19:47:27Zen
dc.date.available2015-05-21T19:47:27Zen
dc.date.issued1993-06-01en
dc.description.abstractFerroelectric bismuth titanate thin films were successfully deposited on Si, sapphire disks, and Pt/Ti/SiO2/Si substrates by hot wall metalorganic chemical vapor deposition. Triphenyl bismuth [Bi(C6H5)3] and titanium ethoxide [Ti(C2H5O)4] were used as the precursors. The deposition rates were in the range of 3.9-12.5 nm/min. The Bi/Ti ratio was easily controlled by precursor temperature, carrier gas flow rate, and deposition temperature. As-deposited films were pure Bi4Ti3O12 phase. The films were specular and showed uniform and fine grain size. Optical constants as a function of wavelength, were calculated from the film transmission characteristics in the ultraviolet-visible-near infrared (UV-VIS-NIR) region. The 550-degrees-C annealed film showed a spontaneous polarization of 26.5 muC/cm2 and a coercive field of 244.3 kV/cm.en
dc.description.sponsorshipUnited States. Defense Advanced Research Projects Agencyen
dc.description.sponsorshipUnited States. Office of Naval Researchen
dc.description.sponsorshipVirginia Center for Innovative Technology. Center for Advanced Ceramic Materialsen
dc.format.extent5 pagesen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationSi, J., Desu, S. B. (1993). Ferroelectric bismuth titanate films by hot wall metalorganic chemical vapor deposition. Journal of Applied Physics, 73(11), 7910-7913. doi: 10.1063/1.353943en
dc.identifier.doihttps://doi.org/10.1063/1.353943en
dc.identifier.issn0021-8979en
dc.identifier.urihttp://hdl.handle.net/10919/52448en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/jap/73/11/10.1063/1.353943en
dc.language.isoen_USen
dc.publisherAmerican Institute of Physicsen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectThin filmsen
dc.subjectFerroelectric thin filmsen
dc.subjectBismuthen
dc.subjectFerroelectric materialsen
dc.subjectFerroelectric substratesen
dc.titleFerroelectric bismuth titanate films by hot wall metalorganic chemical vapor depositionen
dc.title.serialJournal of Applied Physicsen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten
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