Low temperature processed 0.7SrBi(2)Ta(2)O(9)-0.3Bi(3)TaTiO(9) thin films fabricated on multilayer electrode-barrier structure for high-density ferroelectric memories

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dc.contributorVirginia Techen
dc.contributor.authorRyu, S. O.en
dc.contributor.authorJoshi, Pooran C.en
dc.contributor.authorDesu, Seshu B.en
dc.contributor.departmentElectrical and Computer Engineeringen
dc.contributor.departmentMaterials Science and Engineering (MSE)en
dc.date.accessed2014-03-27en
dc.date.accessioned2014-04-16T14:16:43Zen
dc.date.available2014-04-16T14:16:43Zen
dc.date.issued1999-10-01en
dc.description.abstractThin films of solid-solution material 0.7SrBi(2)Ta(2)O(9)-0.3Bi(3)TaTiO(9) (0.7SBT-0.3BTT) were fabricated on n(+)-polycrystalline (n(+)-poly) Si substrates by a metalorganic solution deposition technique at a low processing temperature of 650 degrees C using a Pt-Rh/Pt-Rh-O-x electrode-barrier structure. The Pt-Rh/Pt-Rh-O-x structure was deposited using an in situ reactive radio frequency sputtering process. The electrodes had a smooth and fine-grained microstructure and were excellent diffusion barriers between the 0.7SBT-0.3BTT thin film and Si substrate. The ferroelectric (0.7SBT-0.3BTT) test capacitors using these electrode-barrier grown directly on Si showed good ferroelectric hysteresis properties, measured through n(+)-poly Si substrate, with 2P(r) and E-c values of 11.5 mu C/cm(2) and 80 kV/cm, respectively, at an applied electric field of 200 kV/cm. The films exhibited good fatigue characteristics (< 10% decay) under bipolar stressing up to 10(11) switching cycles and the leakage current density was lower 10(-7) A/cm(2) at an applied electric field of 200 kV/cm. The good ferroelectric properties of 0.7SBT-0.3BTT solid-solution thin films at a low processing temperature of 650 degrees C and excellent electrode-diffusion barrier properties of a Pt-Rh/Pt-Rh-O-x structure are encouraging for the realization of high-density nonvolatile ferroelectric random access memories on silicon substrates. (C) 1999 American Institute of Physics. [S0003-6951(99)01240-1].en
dc.format.mimetypeapplication/pdfen
dc.identifier.citationRyu, SO; Joshi, PC; Desu, SB, " Low temperature processed 0.7SrBi(2)Ta(2)O(9)-0.3Bi(3)TaTiO(9) thin films fabricated on multilayer electrode-barrier structure for high-density ferroelectric memories," Appl. Phys. Lett. 75, 2126 (1999); http://dx.doi.org/10.1063/1.124938en
dc.identifier.doihttps://doi.org/10.1063/1.124938en
dc.identifier.issn0003-6951en
dc.identifier.urihttp://hdl.handle.net/10919/47389en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/75/14/10.1063/1.124938en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectFerroelectric thin filmsen
dc.subjectThin film structureen
dc.subjectFerroelectric substratesen
dc.subjectFerroelectric memoriesen
dc.subjectMaterials fabricationen
dc.titleLow temperature processed 0.7SrBi(2)Ta(2)O(9)-0.3Bi(3)TaTiO(9) thin films fabricated on multilayer electrode-barrier structure for high-density ferroelectric memoriesen
dc.title.serialApplied Physics Lettersen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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