Design, fabrication, and analysis of p-channel arsenide/antimonide hetero-junction tunnel transistors

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dc.contributorVirginia Tech. Bradley Department of Electrical and Computer Engineeringen
dc.contributorPenn State. Department of Electrical Engineeringen
dc.contributorPurdue University. Department of Electrical and Computer Engineeringen
dc.contributor.authorRajamohanan, Bijeshen
dc.contributor.authorMohata, Dheeraj K.en
dc.contributor.authorZhu, Yanen
dc.contributor.authorHudait, Mantu K.en
dc.contributor.authorJiang, Zhengpingen
dc.contributor.authorHollander, Matthewen
dc.contributor.authorKlimeck, Gerharden
dc.contributor.authorDatta, Sumanen
dc.contributor.departmentElectrical and Computer Engineeringen
dc.date.accessed2015-04-24en
dc.date.accessioned2015-05-04T16:58:31Zen
dc.date.available2015-05-04T16:58:31Zen
dc.date.issued2014-01-23en
dc.description.abstractIn this paper, we demonstrate InAs/GaSb hetero-junction (hetJ) and GaSb homo-junction (homJ) p-channel tunneling field effect transistors (pTFET) employing a low temperature atomic layer deposited high-kappa gate dielectric. HetJ pTFET exhibited drive current of 35 mu A/mu m in comparison to homJ pTFET, which exhibited drive current of 0.3 mu A/mu m at V-DS = -0.5V under DC biasing conditions. Additionally, with pulsing of 1 mu s gate voltage, hetJ pTFET exhibited enhanced drive current of 85 mu A/mu m at V-DS = -0.5 V, which is the highest reported in the category of III-V pTFET. Detailed device characterization was performed through analysis of the capacitance-voltage characteristics, pulsed current-voltage characteristics, and x-ray diffraction studies. (C) 2014 AIP Publishing LLC.en
dc.description.sponsorshipNRI/SRC sponsored MIND centeren
dc.description.sponsorshipNational Science Foundation. ASSIST Nanosystems ERC - EEC-1160483en
dc.description.sponsorshipNational Science Foundationen
dc.description.sponsorshipNetwork for Computational Nanotechnology - Award Number EEC-0228390en
dc.format.extent8 pagesen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationRajamohanan, Bijesh, Mohata, Dheeraj, Zhu, Yan, Hudait, Mantu, Jiang, Zhengping, Hollander, Matthew, Klimeck, Gerhard, Datta, Suman (2014). Design, fabrication, and analysis of p-channel arsenide/antimonide hetero-junction tunnel transistors. Journal of Applied Physics, 115(4). doi: 10.1063/1.4862042en
dc.identifier.doihttps://doi.org/10.1063/1.4862042en
dc.identifier.issn0021-8979en
dc.identifier.urihttp://hdl.handle.net/10919/51975en
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/jap/115/4/10.1063/1.4862042en
dc.language.isoenen
dc.publisherAmerican Institute of Physicsen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectIII-V semiconductorsen
dc.subjectAtomic layer depositionen
dc.subjectValence bandsen
dc.subjectGas liquid interfacesen
dc.subjectConduction bandsen
dc.titleDesign, fabrication, and analysis of p-channel arsenide/antimonide hetero-junction tunnel transistorsen
dc.title.serialJournal of Applied Physicsen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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