Metalorganic chemical vapor deposition of layered structure oxides
dc.contributor.assignee | Sharp Kabushiki | en |
dc.contributor.assignee | Cedraeus Incorporated | en |
dc.contributor.assignee | Virginia Polytechnic Institute and State University | en |
dc.contributor.department | Electrical and Computer Engineering | en |
dc.contributor.inventor | Desu, Seshu B. | en |
dc.contributor.inventor | Tao, W. | en |
dc.date.accessed | 2016-08-19 | en |
dc.date.accessioned | 2016-08-24T17:53:43Z | en |
dc.date.available | 2016-08-24T17:53:43Z | en |
dc.date.filed | 1994-09-02 | en |
dc.date.issued | 1995-12-26 | en |
dc.description.abstract | A method of fabricating high quality layered structure oxide ferroelectric thin films. The deposition process is a chemical vapor deposition process involving chemical reaction between volatile metal organic compounds of various elements comprising the layered structure material to be deposited, with other gases in a reactor, to produce a nonvolatile solid that deposits on a suitably placed substrate such as a conducting, semiconducting, insulating, or complex integrated circuit substrate. The source materials for this process may include organometallic compounds such as alkyls, alkoxides, .beta.-diketonates or metallocenes of each individual element comprising the layered structure material to be deposited and oxygen. Preferably, the reactor in which the deposition is done is either a hot wall or a cold wall reactor and the vapors are introduced into this reactor either through a set of bubblers or through a direct liquid injection system. The ferroelectric films can be used for device applications such as in capacitors, dielectric resonators, heat sensors, transducers, actuators, nonvolatile memories, optical waveguides and displays. | en |
dc.format.mimetype | application/pdf | en |
dc.identifier.applicationnumber | 8300339 | en |
dc.identifier.patentnumber | 5478610 | en |
dc.identifier.uri | http://hdl.handle.net/10919/72302 | en |
dc.identifier.url | http://pimg-fpiw.uspto.gov/fdd/10/786/054/0.pdf | en |
dc.language.iso | en | en |
dc.publisher | United States Patent and Trademark Office | en |
dc.subject.cpc | C23C16/40 | en |
dc.subject.cpc | H01L28/55 | en |
dc.subject.cpc | H01L21/31122 | en |
dc.subject.cpc | H01L21/31691 | en |
dc.subject.cpc | H01L28/60 | en |
dc.subject.cpc | H01L28/75 | en |
dc.subject.uspc | 257/E21.009 | en |
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dc.title | Metalorganic chemical vapor deposition of layered structure oxides | en |
dc.type | Patent | en |
dc.type.dcmitype | Text | en |
dc.type.patenttype | utility | en |
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