2 kV, 0.7 mΩ·cm2 Vertical Ga2O3 Superjunction Schottky Rectifier with Dynamic Robustness
| dc.contributor.author | Qin, Yuan | en |
| dc.contributor.author | Porter, Matthew | en |
| dc.contributor.author | Xiao, Ming | en |
| dc.contributor.author | Du, Zhonghao | en |
| dc.contributor.author | Zhang, Hongming | en |
| dc.contributor.author | Ma, Yunwei | en |
| dc.contributor.author | Spencer, Joseph | en |
| dc.contributor.author | Wang, Boyan | en |
| dc.contributor.author | Song, Qihao | en |
| dc.contributor.author | Sasaki, Kohei | en |
| dc.contributor.author | Lin, Chia-Hung | en |
| dc.contributor.author | Kravchenko, Ivan | en |
| dc.contributor.author | Briggs, Dayrl P. | en |
| dc.contributor.author | Hensley, Dale K. | en |
| dc.contributor.author | Tadjer, Marko | en |
| dc.contributor.author | Wang, Han | en |
| dc.contributor.author | Zhang, Yuhao | en |
| dc.date.accessioned | 2024-04-08T12:25:21Z | en |
| dc.date.available | 2024-04-08T12:25:21Z | en |
| dc.date.issued | 2023 | en |
| dc.description.abstract | We report the first experimental demonstration of a vertical superjunction device in ultra-wide bandgap (UWBG) Ga2O3. The device features 1.8 μm wide, 2×1017 cm-3 doped n-Ga2O3 pillars wrapped by the charge-balanced p-type nickel oxide (NiO). The sidewall NiO is sputtered through a novel self-align process. Benefitted from the high doping in Ga2O3, the superjunction Schottky barrier diode (SJ-SBD) achieves a ultra-low specific on-resistance (RON,SP) of 0.7 mΩ·cm2 with a low turn-on voltage of 1 V and high breakdown voltage (BV) of 2000 V. The RON,SP~BV trade-off is among the best in all WBG and UWBG power SBDs. The device also shows good thermal stability with BV > 1.8 kV at 175 oC. In the unclamped inductive switching tests, the device shows a dynamic BV of 2.2 kV and no degradation under 1.7 kV repetitive switching, verifying the fast acceptor depletion in NiO under dynamic switching. Such high-temperature and switching robustness are reported for the first time in a heterogeneous superjunction. These results show the great potential of UWBG superjunction power devices. | en |
| dc.description.version | Accepted version | en |
| dc.format.mimetype | application/pdf | en |
| dc.identifier.doi | https://doi.org/10.1109/IEDM45741.2023.10413795 | en |
| dc.identifier.uri | https://hdl.handle.net/10919/118507 | en |
| dc.language.iso | en | en |
| dc.publisher | IEEE | en |
| dc.rights | Creative Commons Attribution 4.0 International | en |
| dc.rights.uri | http://creativecommons.org/licenses/by/4.0/ | en |
| dc.title | 2 kV, 0.7 mΩ·cm<sup>2</sup> Vertical Ga<sub>2</sub>O<sub>3</sub> Superjunction Schottky Rectifier with Dynamic Robustness | en |
| dc.title.serial | 2023 International Electron Devices Meeting (IEDM) | en |
| dc.type | Conference proceeding | en |
| dc.type.dcmitype | Text | en |