Browsing by Author "Hudait, Mantu K."

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    Advanced Energy-Efficient Devices for Ultra-Low Voltage System: Materials-to-Circuits
    Liu, Jheng-Sin (Virginia Tech, 2018-01-18)
    The overall energy consumption of portable devices has been projected to triple over the next decade, growing to match the total power generated by the European Union and Canada by 2025. The rise of the internet-of-things (IoT) and ubiquitous and embedded computing has resulted in an exponential increase in such devices, wherein projections estimate that 50 billion smart devices will be connected and online by 2020. In order to alleviate the associated stresses placed on power generation and distribution networks, a holistic approach must be taken to conserve energy usage in electronic devices from the component to the circuit level. An effective approach to reduce power dissipation has been a continual reduction in operating voltage, thereby quadratically down-scaling active power dissipation. However, as state-of-the-art silicon (Si) complimentary metal-oxide-semiconductor (CMOS) field-effect transistors (FETs) enter sub-threshold operation in the ultra-low supply voltage regime, their drive current is noticeable degraded. Therefore, new energy-efficient MOSFETs and circuit architectures must be introduced. In this work, tunnel FETs (TFETs), which operate leveraging quantum mechanical tunneling, are investigated. A comprehensive investigation detailing electronic materials, to novel TFET device designs, to memory and logic digital circuits based upon those TFETs is provided in this work. Combined, these advances offer a computing platform that could save considerable energy and reduce power consumption in next-generation, ultra-low voltage applications.
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    Advancing Nanoplasmonics-enabled Regenerative Spatiotemporal Pathogen Monitoring at Bio-interfaces
    Garg, Aditya (Virginia Tech, 2024-05-09)
    Non-invasive and continuous spatiotemporal pathogen monitoring at biological interfaces (e.g., human tissue) holds promise for transformative applications in personalized healthcare (e.g., wound infection monitoring) and environmental surveillance (e.g., airborne virus surveillance). Despite notable progress, current receptor-based biosensors encounter inherent limitations, including inadequate long-term performance, restricted spatial resolutions and length scales, and challenges in obtaining multianalyte information. Surface-enhanced Raman spectroscopy (SERS) has emerged as a robust analytical method, merging the molecular specificity of Raman spectroscopy's vibrational fingerprinting with the enhanced detection sensitivity from strong light-matter interaction in plasmonic nanostructures. As a receptor-free and noninvasive detection tool capable of capturing multianalyte chemical information, SERS holds the potential to actualize bio-interfaced spatiotemporal pathogen monitoring. Nonetheless, several challenges must be addressed before practical adoption, including the development of plasmonic bio-interfaces, sensitive capture of multianalyte information from pathogens, regeneration of nanogap hotspots for long-term sensing, and extraction of meaningful information from spatiotemporal SERS datasets. This dissertation tackles these fundamental challenges. Plasmonic bio-interfaces were created using innovative nanoimprint lithography-based scalable nanofabrication methods for reliable bio-interfaced spatiotemporal measurements. These plasmonic bio-interfaces feature sensitive, dense, and uniformly distributed plasmonic transducers (e.g., plasmonic nano dome arrays, optically-coupled plasmonic nanodome and nanohole arrays, self-assembled nanoparticle micro patches) on ultra-flexible and porous platforms (e.g., biomimetic polymeric meshes, textiles). Using these plasmonic bio-interfaces, advancements were made in SERS signal transduction, machine-learning-enabled data analysis, and sensor regeneration. Large-area multianalyte spatiotemporal monitoring of bacterial biofilm components and pH was demonstrated in in-vitro biofilm models, crucial for wound biofilm diagnostics. Additionally, novel approaches for sensitive virus detection were introduced, including monitoring spectral changes during viral infection in living biofilms and direct detection of decomposed viral components. Spatiotemporal SERS datasets were analyzed using unsupervised machine-learning methods to extract biologically relevant spatiotemporal information and supervised machine-learning tools to classify and predict biological outcomes. Finally, a sensor regeneration method based on plasmon-induced nanocavitation was developed to enable long-term continuous detection in protein-rich backgrounds. Through continuous implementation of spatiotemporal SERS signal transduction, machine-learning-enabled data analysis, and sensor regeneration in a closed loop, our solution has the potential to enable spatiotemporal pathogen monitoring at the bio-interface.
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    Atomic Layer Deposited Tantalum Silicate on Crystallographically-Oriented Epitaxial Germanium: Interface Chemistry and Band Alignment
    Clavel, Michael B.; Bhattacharya, Shuvodip; Hudait, Mantu K. (Royal Society of Chemistry, 2022-05-13)
    The interface chemistry and energy band alignment properties of atomic layer deposited (ALD) tantalum silicate (TaSiOx) dielectrics on crystallographically-oriented, epitaxial (001)Ge, (110)Ge, and (111)Ge thin-films, grown on GaAs substrates by molecular beam epitaxy, were investigated. The ALD process, consisting of a 6 : 1 Ta : Si precursor super-cycle, was analyzed via sputter depth-dependent elemental analysis utilizing X-ray photoelectron spectroscopy (XPS). The XPS investigations revealed uniform Si incorporation throughout the TaSiOx dielectric, and a measurable amount of cross-diffusion between Ge and Ta atomic species in the vicinity of the oxide/semiconductor heterointerface. The formation of a thin SiO2 interfacial oxide, through the intentional pre-pulsing of the Si precursor prior to the Si : Ta super-cycle process, was observed via cross-sectional transmission electron microscopy analysis. Moreover, the bandgap of Ta-rich Ta0.8Si0.2Ox dielectrics, analyzed using the photoelectron energy loss technique centered on the O 1s binding energy spectra, was determined to be in the range of 4.62 eV-4.66 eV (±0.06 eV). Similarly, the XPS-derived valence band and conduction band offsets (ΔEV and ΔEC, respectively) were found to be ΔEV > 3.0 ± 0.1 eV and ΔEC > 0.6 ± 0.1 eV for the (001)Ge, (110)Ge, and (111)Ge orientations, promoting the increased carrier confinement necessary for reducing operational and off-state leakage current in metal-oxide-semiconductor devices. Thus, the empirical TaSiOx/Ge interfacial energy band offsets, coupled with the uniform dielectric deposition observed herein, provides key guidance for the integration of TaSiOx dielectrics with Ge-based field-effect transistors targeting ultra-low power logic applications.
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    Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor application
    Zhu, Yizheng; Jain, Nikhil; Mohata, Dheeraj K.; Datta, Suman; Lubyshev, Dmitri; Fastenau, Joel M.; Liu, Amy K.; Hudait, Mantu K. (American Institute of Physics, 2013-01-14)
    The experimental study of the valence band offset (Delta E-v) of a mixed As/Sb type-II staggered gap GaAs0.35Sb0.65/In0.7Ga0.3As heterostructure used as source/channel junction of n-channel tunnel field effect transistor (TFET) grown by molecular beam epitaxy was investigated by x-ray photoelectron spectroscopy (XPS). Cross-sectional transmission electron micrograph shows high crystalline quality at the source/channel heterointerface. XPS results demonstrate a Delta E-v of 0.39 +/- 0.05 eV at the GaAs0.35Sb0.65/In0.7Ga0.3As heterointerface. The conduction band offset was calculated to be similar to 0.49 eV using the band gap values of source and channel materials and the measured valence band offset. An effective tunneling barrier height of 0.21 eV was extracted, suggesting a great promise for designing a metamorphic mixed As/Sb type-II staggered gap TFET device structure for low-power logic applications. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4775606]
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    Carrier recombination dynamics and temperature dependent optical properties of InAs-GaSb heterostructures
    Hudait, Mantu K.; Johnston, Steven W.; Meeker, Michael; Khodaparast, Giti A. (Royal Society of Chemistry, 2022-11-04)
    Heterostructures with two dissimilar materials could offer unprecedented properties if one can carefully synthesize these heterostructures with atomically smooth interfaces and reduced number of recombination centers. InAs/GaSb-based heterostructures have technological importance for long wavelength infrared photodetectors if one can synthesize these materials with high-optical quality and high-carrier lifetime. In this work, the InAs/GaSb heterostructures with a different number of heterointerfaces and growth conditions were grown by solid source molecular beam epitaxy using valved cracker sources for both arsenic and antimony. Precise control of growth parameters and shutter sequences enabled abrupt InAs/GaSb heterointerfaces, as supported by a high-resolution transmission electron microscopic study. The temperature and power-dependent optical properties by photoluminescence (PL) spectroscopic analysis of InAs/GaSb heterostructures with 4 and 28 heterointerfaces displayed donor to the acceptor and the exciton bound to complex defects (VGaGaSb)0. Since the optical transition in PL measurements serves to determine the quality of the material, and the observed excitonic transitions from these InAs/GaSb heterostructures is an indication of high-quality materials. The high-carrier lifetimes of 139 ns to 185 ns from InAs/GaSb heterostructures were measured using microwave photoconductivity decay (μ-PCD) technique at room temperature. The observed increase in carrier lifetime is due to the decreasing number of Ga-related carrier recombination centers or defect complexes. This is further supported by the PL spectroscopic study. In addition, the carrier lifetime with different injection levels is supported by Shockley-Read-Hall recombination. Hence, these InAs/GaSb heterostructures with high-optical quality and high-carrier lifetimes would offer a path for the development of high-performance infrared photodetectors.
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    Characterization of Proton and Sulfur Implanted GaSb Photovoltaics and Materials
    Karimi, Ebrahim (Virginia Tech, 2021-01-25)
    III-V compound Gallium Antimonide (GaSb), with a low bandgap of 0.72 eV at room temperature, is an attractive candidate for a variety of potential applications in optoelectronic devices. Ion implantation, among non-epitaxial methods, is a common and reliable doping technique to achieve local doping and obtain high-performance ohmic contacts in order to form a pn junction in such devices. An advantage of this technique over the diffusion method is the ability to perform a low-temperature process leading to accurate control of the dopant profile and avoiding Sb evaporation from GaSb surface occurring at 370 C. In this work, the effect of protons and sulfur ions as two implant species on the electrical behavior of MBE-grown undoped GaSb on semi-insulating (SI) GaAs was investigated via the Hall Effect. Protons and sulfur ions were implanted at room temperature (27 C) and 200 C, respectively, and rapid thermal annealing (RTA) was implemented at various temperatures and durations upon encapsulated GaSb. The damage induced by protons enhanced the hole density of GaSb up to around 10 times, whereas mobilities showed both increase and decrease compared to the un-implanted one, depending on the dose. While the activation of sulfur donors at an elevated temperature was anticipated after annealing sulfur implanted GaSb, instead it led to increase in p-type concentration, as the residual damage originated from sulfur implantation dominated substitutional doping. Furthermore, GaSb p/n photovoltaic devices were fabricated by applying sulfur implantation through silicon nitride layer at RT into an n-GaSb wafer (n-type base, p-type emitter). The device showed a rectifying current and photovoltaic characteristic. The J-V plot under AM1.5G illumination conditions, before and after an etch-back optimizing process, indicated lower short circuit current density J_sc, the same open circuit voltage V_oc, and higher fill factor FF, compared to the photovoltaic device with a p-type base. Also, both normalized series R_s and shunt R_p resistances in p/n diode indicated lower and higher values, respectively, as opposed to a GaSb p++/p diode, indicative of higher quality and lower manufacturing defects.
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    Chip-Scale Gas Chromatography
    Akbar, Muhammad (Virginia Tech, 2015-09-04)
    Instrument miniaturization is led by the desire to perform rapid diagnosis in remote areas with high throughput and low cost. In addition, miniaturized instruments hold the promise of consuming small sample volumes and are thus less prone to cross-contamination. Gas chromatography (GC) is the leading analytical instrument for the analysis of volatile organic compounds (VOCs). Due to its wide-ranging applications, it has received great attention both from industrial sectors and scientific communities. Recently, numerous research efforts have benefited from the advancements in micro-electromechanical system (MEMS) and nanotechnology based solutions to miniaturize the key components of GC instrument (pre-concentrator/injector, separation column, valves, pumps, and the detector). The purpose of this dissertation is to address the critical need of developing a micro GC system for various field- applications. The uniqueness of this work is to emphasize on the importance of integrating the basic components of μGC (including sampling/injection, separation and detection) on a single platform. This integration leads to overall improved performance as well as reducing the manufacturing cost of this technology. In this regard, the implementation of micro helium discharge photoionization detector (μDPID) in silicon-glass architecture served as a major accomplishment enabling its monolithic integration with the micro separation column (μSC). For the first time, the operation of a monolithic integrated module under temperature and flow programming conditions has been demonstrated to achieve rapid chromatographic analysis of a complex sample. Furthermore, an innovative sample injection mechanism has been incorporated in the integrated module to present the idea of a chip-scale μGC system. The possibility of using μGC technology in practical applications such as breath analysis and water monitoring is also demonstrated. Moreover, a nanotechnology based scheme for enhancing the adsorption capacity of the microfabricated pre-concentrator is also described.
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    Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure
    Zhu, Yizheng; Jain, Nikhil; Vijayaraghavan, S.; Mohata, Dheeraj K.; Datta, Suman; Lubyshev, Dmitri; Fastenau, Joel M.; Liu, Amy K.; Monsegue, Niven; Hudait, Mantu K. (American Institute of Physics, 2012-11-01)
    The compositional dependence of effective tunneling barrier height (E-beff) and defect assisted band alignment transition from staggered gap to broken gap in GaAsSb/InGaAs n-channel tunnel field effect transistor (TFET) structures were demonstrated by x-ray photoelectron spectroscopy (XPS). High-resolution x-ray diffraction measurements revealed that the active layers are internally lattice matched. The evolution of defect properties was evaluated using cross-sectional transmission electron microscopy. The defect density at the source/channel heterointerface was controlled by changing the interface properties during growth. By increasing indium (In) and antimony (Sb) alloy compositions from 65% to 70% in InxGa1-xAs and 60% to 65% in GaAs1-ySby layers, the E-beff was reduced from 0.30 eV to 0.21 eV, respectively, with the low defect density at the source/channel heterointerface. The transfer characteristics of the fabricated TFET device with an E-beff of 0.21eV show 2x improvement in ON-state current compared to the device with E-beff of 0.30 eV. On contrary, the value of E-beff was decreased from 0.21 eV to -0.03 eV due to the presence of high defect density at the GaAs0.35Sb0.65/In0.7Ga0.3As heterointerface. As a result, the band alignment was converted from staggered gap to broken gap, which leads to 4 orders of magnitude increase in OFF-state leakage current. Therefore, a high quality source/channel interface with a properly selected E-beff and well maintained low defect density is necessary to obtain both high ON-state current and low OFF-state leakage in a mixed As/Sb TFET structure for high-performance and lower-power logic applications. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4764880]
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    Density Modulated Semi-Packed Micro Gas Chromatography Columns
    Chan, Ryan (Virginia Tech, 2018-05-03)
    With the continued evolution of MEMS-based gas chromatography, the drive to develop new standalone systems with lower power consumptions and higher portability has increased. However, with improvements come tradeoffs, and trying to reduce the pressure drop requirements of previously reported semi-packed columns causes a significant sacrifice in separation efficiency. This thesis covers the techniques for evaluating the separation column in a gas chromatography system as well as the important parameters that have the most effect on a column’s efficiency. Ionic liquids are introduced as a stable and versatile stationary phase for micro separation columns. It then describes a MEMS-based separation column design utilizing density modulation of embedded micro-pillars which attempts to optimize the balance between separation efficiency and pressure drop.
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    Design Considerations and Quantum Confinement Effect in Monolithic ϵ-Ge/InxGa1-xAs Nanoscale FinFETs Down to N5 Node
    Joshi, Rutwik; Karthikeyan, Sengunthar; Hudait, Mantu K. (IEEE, 2022-12-01)
    In this work, we have studied the effect of material parameters (indium (In) composition and doping), geometrical parameters (channel length L, fin width W, aspect ratio AR), and quantum confinement (QC) on the performance and operability of a ε-Ge/InxGa1-xAs hybrid CMOS system. In this system, the In compositional InxGa1-xAs and tensile strained Ge (ε-Ge) grown on the InxGa1-xAs layer, were used as n- and p-channel FinFETs, respectively. The In composition in InxGa1-xAs layer (lattice matched with graded InxAl1-xAs buffer) determines the amount of tensile strain in Ge. This hybrid system utilizes the benefits of metamorphic (InxGa1-xAs/InxAl1-xAs) as well as pseudomorphic (ε- Ge/InxGa1-xAs) heteroepitaxy to create high performance tunable complementary devices, suitable for 0.5 V CMOS operation. The device metrics such as, threshold voltage, on-current (ION), offcurrent (IOFF), subthreshold-swing (SS), and drain induced barrier lowering (DIBL), and their dependence on material and geometrical parameters were evaluated using self-consistent analytical solvers scaled down to the N5 node. At these scaled dimensions, this hybrid system demonstrated ultra-low leakage current and SS for the n-FinFET and p-FinFET of 10 pA/μm, 27 nA/μm, 85 mV/dec and 95 mV/dec, respectively. With the effect of QC, we identify a transition fin width (WT) associated with scaling of alternate channel FinFETs, at which the performance is optimum and below WT, the benefits of scaling are diminished. Moreover, this hybrid system has a potential to find applications in optoelectronic and RF systems as well as high-performance computing.
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    Design of III-V Multijunction Solar Cells on Silicon Substrate
    Jain, Nikhil (Virginia Tech, 2011-05-06)
    With looming energy crisis across the globe, achieving high efficiency and low cost solar cells have long been the key objective for photovoltaic researchers. III-V compound semiconductor based multijunction solar cells have been the dominant choice for space power due to their superior performance compared to any other existing solar cell technologies. In spite of unmatched performance of III-V solar cells, Si cells have dominated the terrestrial market due to their lower cost. Most of the current III-V solar cells are grown on Ge or GaAs substrates, which are not only smaller in diameter, but are also more expensive than Si substrate. Direct integration of high efficiency III-V solar cells on larger diameter, cheaper and readily available Si substrate is highly desirable for increased density, low-cost and lightweight photovoltaics. However, the polar-on-nonpolar epitaxy, the thermal mismatch and the 4% lattice mismatch makes the direct growth of GaAs on Si challenging, rendering the metamorphic cell sensitive to dislocations. The focus of this work is to investigate and correlate the impact of threading dislocation density on the performance of lattice-mismatched single-junction (1J) GaAs and dual-junction (2J) InGaP/GaAs solar cells on Si substrate. Utilizing our calibrated dislocation-assisted modeling process, we present the design methodology to optimize the structure of 2J InGaP/GaAs solar cell on Si substrate. Our modeling results suggest an optimistic future for integrating III-V solar cell technology on Si substrate and will be useful for future design and prediction of metamorphic III-V solar cell performance on Si substrate.
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    Design of optical characteristics of ceria nanoparticles for applications including gas sensing and up-conversion
    Shehata, Nader (Virginia Tech, 2012-12-13)
    This thesis investigates the impact of doping on the optical and structural characteristics of cerium oxide (ceria) nanoparticles synthesized using chemical precipitation. The dopants selected are samarium and neodymium, which have positive association energy with oxygen vacancies in the ceria host, and negative association lanthanides, holmium and erbium, as well as two metal dopants, aluminum and iron. Characteristics measured are absorption and fluorescence spectra and the diameter and lattice parameter of ceria. Analysis of the characteristics indicates qualitatively that the dopant controls the O-vacancy concentration and the ratio of the two cerium ionization states: Ce+3 and Ce+4. A novel conclusion is proposed that the negative association lanthanide dopants can act as O-vacancies scavengers in ceria while the O-vacancy concentration increases in ceria doped with positive association lanthanide elements. Doped ceria nanoparticles are evaluated in two applications: dissolved oxygen (DO) sensing and up-conversion. In the first application, ceria doped with either Sm or Nd and ceria doped with aluminum have a strong correlation between the fluorescence quenching with the DO concentration in the aqueous solution in which the ceria nanoparticles are suspended. Stern-Volmer constants (KSV) of doped ceria are found to strongly depend upon the O-vacancy concentration and are larger than some of the fluorescent molecular probes currently used to measure DO. The KSV measured between 25-50oC is found to be significantly less temperature dependent as compared to the constants of commercially-available DO molecular probes. In the second application, up-conversion, ceria nanoparticles doped with erbium and an additional lanthanide, either Sm or Nd, are exposed to IR radiation at 780 nm. Visible emission is only observed after the nanoparticles are calcinated at high temperature, greatly diminishing the concentration of O-vacancies. It is concluded that O-vacancies do not play a dominant role in up-conversion, unlike that drawn for down-conversion, where the fluorescence intensity is strongly correlated with the O-vacancy concentration. Correlations between annealing temperatures, dopant, and dopant concentrations with the power dependence of up-conversion on the pump and the origin of the intensities of the visible emission are presented. These studies show the promise of doped ceria nanoparticles.
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    Design, fabrication, and analysis of p-channel arsenide/antimonide hetero-junction tunnel transistors
    Rajamohanan, Bijesh; Mohata, Dheeraj K.; Zhu, Yan; Hudait, Mantu K.; Jiang, Zhengping; Hollander, Matthew; Klimeck, Gerhard; Datta, Suman (American Institute of Physics, 2014-01-23)
    In this paper, we demonstrate InAs/GaSb hetero-junction (hetJ) and GaSb homo-junction (homJ) p-channel tunneling field effect transistors (pTFET) employing a low temperature atomic layer deposited high-kappa gate dielectric. HetJ pTFET exhibited drive current of 35 mu A/mu m in comparison to homJ pTFET, which exhibited drive current of 0.3 mu A/mu m at V-DS = -0.5V under DC biasing conditions. Additionally, with pulsing of 1 mu s gate voltage, hetJ pTFET exhibited enhanced drive current of 85 mu A/mu m at V-DS = -0.5 V, which is the highest reported in the category of III-V pTFET. Detailed device characterization was performed through analysis of the capacitance-voltage characteristics, pulsed current-voltage characteristics, and x-ray diffraction studies. (C) 2014 AIP Publishing LLC.
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    Design, Modeling and Control of Bidirectional Resonant Converter for Vehicle-to-Grid (V2G) Applications
    Zahid, Zaka Ullah (Virginia Tech, 2015-11-24)
    Electric vehicles (EVs) and plug-in hybrid electric vehicles (PHEVs) are gaining popularity because they are more environmentally friendly, less noisy and more efficient. These vehicles have batteries can be charged by on-board battery chargers that can be conductive or inductive. In conductive chargers, the charger is physically connected to the grid by a connector. With the inductive chargers, energy can be transferred wirelessly over a large air-gap through inductive coupling, eliminating the physical connection between the charger and the grid. A typical on-board battery charger consists of a boost power factor correction (PFC) converter followed by a dc-dc converter. This dissertation focuses on the design, modeling and control of a bidirectional dc-dc converter for conductive battery charging application. In this dissertation, a detailed design procedure is presented for a bidirectional CLLLC-type resonant converter for a battery charging application. This converter is similar to an LLC-type resonant converter with an extra inductor and capacitor in the secondary side. Soft-switching can be ensured in all switches without additional snubber or clamp circuitry. Because of soft-switching in all switches, very high-frequency operation is possible, thus the size of the magnetics and the filter capacitors can be made small. To further reduce the size and cost of the converter, a CLLC-type resonant network with fewer magnetics is derived from the original CLLLC-type resonant network. First, an equivalent model for the bidirectional converter is derived for the steady-state analysis. Then, the design methodology is presented for the CLLLC-type resonant converter. Design of this converter includes determining the transformer turns ratio, design of the magnetizing inductance based on ZVS condition, design of the resonant inductances and capacitances. Then, the CLLC-type resonant network is derived from the CLLLC-type resonant network. To validate the proposed design procedure, a 3.5 kW converter was designed following the guidelines in the proposed methodology. A prototype was built and tested in the lab. Experimental results verified the design procedure presented. The dynamics analysis of any converter is necessary to design the control loop. The bandwidth, phase margin and gain margin of the control loops should be properly designed to guarantee a robust system. The dynamic analysis of the resonant converters have not been extensively studied, with the previous work mainly concentrated on the steady-state models. In this dissertation, the continuous-time large-signal model, the steady-state operating point, and the small-signal model are derived in an analytical closed-form. This model includes both the frequency and the phase-shift control. Simulation and experimental verification of the derived models are presented to validate the presented analysis. A detailed controller design methodology is proposed in this dissertation for the bidirectional CLLLC-type resonant converter for battery charging application. The dynamic characteristics of this converter change significantly as the battery charges or discharges. And, at some operating points, there is a high-Q resonant peaking in the open-loop bode-plot for any transfer functions in this converter. So, if the controller is not properly designed, the closed-loop system might become unstable at some operating points. In this paper, a controller design methodology is proposed that will guarantee a stable operation during the entire operating frequency range in both battery charging mode (BCM) and regeneration mode (RM). To validate the proposed controller design methodology, the output current and voltage loop controllers are designed for a 3.5 kW converter. The step response showed a stable system with good transient performance thus validating the proposed controller design methodology.
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    Design, Theoretical, and Experimental Investigation of Tensile-Strained Germanium Quantum-Well Laser Structure
    Hudait, Mantu K.; Murphy-Armando, Felipe; Saladukha, Dzianis; Clavel, Michael B.; Goley, Patrick S.; Maurya, Deepam; Bhattacharya, Shuvodip; Ochalski, Tomasz J. (American Chemical Society, 2021-10-14)
    Strain and band gap engineered epitaxial germanium (ϵ-Ge) quantum-well (QW) laser structures were investigated on GaAs substrates theoretically and experimentally for the first time. In this design, we exploit the ability of an InGaAs layer to simultaneously provide tensile strain in Ge (0.7-1.96%) and sufficient optical and carrier confinement. The direct band-to-band gain, threshold current density (Jth), and loss mechanisms that dominate in the ϵ-Ge QW laser structure were calculated using first-principles-based 30-band k·p electronic structure theory, at injected carrier concentrations from 3 × 1018 to 9 × 1019 cm-3. The higher strain in the ϵ-Ge QW increases the gain at higher wavelengths; however, a decreasing thickness is required by higher strain due to critical layer thickness for avoiding strain relaxation. In addition, we predict that a Jth of 300 A/cm2 can be reduced to <10 A/cm2 by increasing strain from 0.2% to 1.96% in ϵ-Ge lasing media. The measured room-temperature photoluminescence spectroscopy demonstrated direct band gap optical emission, from the conduction band at the Γ-valley to heavy-hole (0.6609 eV) from 1.6% tensile-strained Ge/In0.24Ga0.76As heterostructure grown by molecular beam epitaxy, is in agreement with the value calculated using 30-band k·p theory. The detailed plan-view transmission electron microscopic (TEM) analysis of 0.7% and 1.2% tensile-strained ϵ-Ge/InGaAs structures exhibited well-controlled dislocations within each ϵ-Ge layer. The measured dislocation density is below 4 × 106 cm-2 for the 1.2% ϵ-Ge layer, which is an upper bound, suggesting the superior ϵ-Ge material quality. Structural analysis of the experimentally realistic 1.95% biaxially strained In0.28Ga0.72As/13 nm ϵ-Ge/In0.28Ga0.72As QW structure demonstrated a strained Ge/In0.28Ga0.72As heterointerface with minimal relaxation using X-ray and cross-sectional TEM analysis. Therefore, our monolithic integration of a strained Ge QW laser structure on GaAs and ultimately the transfer of the process to the Si substrate via an InGa(Al)As/III-V buffer architecture would provide a significant step toward photonic technology based on strained Ge on a Si platform.
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    Diode Laser Spectroscopy for Measurements of Gas Parameters in Harsh Environments
    Behera, Amiya Ranjan (Virginia Tech, 2017-03-06)
    The detection and measurement of gas properties has become essential to meet rigorous criteria of environmental unfriendly emissions and to increase the energy production efficiency. Although low cost devices such as pellistors, semiconductor gas sensors or electrochemical gas sensors can be used for these applications, they offer a very limited lifetime and suffer from cross-response and drift. On the contrary, gas sensors based on optical absorption offer fast response, zero drift, and high sensitivity with zero cross response to other gases. Hence, over the last forty years, diode laser spectroscopy (DLS) has become an established method for non-intrusive measurement of gas properties in scientific as well as industrial applications. Wavelength modulation spectroscopy (WMS) is derivative form of DLS that has been increasingly applied for making self-calibrated measurements in harsh environments due to its improved sensitivity and noise rejection capability compared to direct absorption detection. But, the complexity in signal processing and higher scope of error (when certain restrictions on operating conditions are not met), have inhibited the widespread use of the technique. This dissertation presents a simple and novel strategy for practical implementation of WMS with commercial diode lasers. It eliminates the need for pre-characterization of laser intensity parameters or making any design changes to the conventional WMS system. Consequently, sensitivity and signal strength remain the same as that obtained from traditional WMS setup at low modulation amplitude. Like previously proposed calibration-free approaches, this new method also yields absolute gas absorption line shape or absorbance function. Residual Amplitude Modulation (RAM) contributions present in the first and second harmonic signals of WMS are recovered by exploiting their even or odd symmetric nature. These isolated RAM signals are then used to estimate the absolute line shape function and thus removing the impact of optical intensity fluctuations on measurement. Uncertainties and noises associated with the estimated absolute line shape function, and the applicability of this new method for detecting several important gases in the near infrared region are also discussed. Absorbance measurements from 1% and 8% methane-air mixtures in 60 to 100 kPa pressure range are used to demonstrate simultaneous recovery of gas concentration and pressure. The system is also proved to be self-calibrated by measuring the gas absorbance for 1% methane-air mixture while optical transmission loss changes by 12 dB. In addition to this, a novel method for diode laser absorption spectroscopy has been proposed to accomplish spatially distributed monitoring of gases. Emission frequency chirp exhibited by semiconductor diode lasers operating in pulsed current mode, is exploited to capture full absorption response spectrum from a target gas. This new technique is referred to as frequency chirped diode laser spectroscopy (FC-DLS). By applying an injection current pulse of nanosecond duration to the diode laser, both spectroscopic properties of the gas and spatial location of sensing probe can be recovered following traditional Optical Time Domain Reflectometry (OTDR) approach. Based on FC-DLS principle, calibration-free measurement of gas absorbance is experimentally demonstrated for two separate sets of gas mixtures of approximately 5% to 20% methane-air and 0.5% to 20% acetylene-air. Finally, distributed gas monitoring is shown by measuring acetylene absorbance from two sensor probes connected in series along a single mode fiber. Optical pulse width being 10 nanosecond or smaller in the sensing optical fiber, a spatial resolution better than 1 meter has been realized by this technique. These demonstrations prove that accurate, non-intrusive, single point, and spatially distributed measurements can be made in harsh environments using the diode laser spectroscopy technology. Consequently, it opens the door to practical implementation of optical gas sensors in a variety of new environments that were previously too difficult.
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    Distributed Wireless Resource Management in the Internet of Things
    Park, Taehyeun (Virginia Tech, 2020-06-18)
    The Internet of Things (IoT) is a promising networking technology that will interconnect a plethora of heterogeneous wireless devices. To support the connectivity across a massive-scale IoT, the scarce wireless communication resources must be appropriately allocated among the IoT devices, while considering the technical challenges that arise from the unique properties of the IoT, such as device heterogeneity, strict communication requirements, and limited device capabilities in terms of computation and memory. The primary goal of this dissertation is to develop novel resource management frameworks using which resource-constrained IoT devices can operate autonomously in a dynamic environment. First, a comprehensive overview on the use of various learning techniques for wireless resource management in an IoT is provided, and potential applications for each learning framework are proposed. Moreover, to capture the heterogeneity among IoT devices, a framework based on cognitive hierarchy theory is discussed, and its implementation with learning techniques of different complexities for IoT devices with varying capabilities is analyzed. Next, the problem of dynamic, distributed resource allocation in an IoT is studied when there are heterogeneous messages. Particularly, a novel finite memory multi-state sequential learning is proposed to enable diverse IoT devices to reallocate the limited communication resources in a self-organizing manner to satisfy the delay requirement of critical messages, while minimally affecting the delay-tolerant messages. The proposed learning framework is shown to be effective for the IoT devices with limited memory and observation capabilities to learn the number of critical messages. The results show that the performance of learning framework depends on memory size and observation capability of IoT devices and that the learning framework can realize low delay transmission in a massive IoT. Subsequently, the problem of one-to-one association between resource blocks and IoT devices is studied, when the IoT devices have partial information. The one-to-one association is formulated as Kolkata Paise Restaurant (KPR) game in which an IoT device tries to choose a resource block with highest gain, while avoiding duplicate selection. Moreover, a Nash equilibrium (NE) of IoT KPR game is shown to coincide with socially optimal solution. A proposed learning framework for IoT KPR game is shown to significantly increase the number of resource blocks used to successful transmit compared to a baseline. The KPR game is then extended to consider age of information (AoI), which is a metric to quantify the freshness of information in the perspective of destination. Moreover, to capture heterogeneity in an IoT, non-linear AoI is introduced. To minimize AoI, centralized and distributed approaches for the resource allocation are proposed to enable the sharing of limited communication resources, while delivering messages to the destination in a timely manner. Moreover, the proposed distributed resource allocation scheme is shown to converge to an NE and to significantly lower the average AoI compared to a baseline. Finally, the problem of dynamically partitioning the transmit power levels in non-orthogonal multiple access is studied when there are heterogeneous messages. In particular, an optimization problem is formulated to determine the number of power levels for different message types, and an estimation framework is proposed to enable the network base station to adjust power level partitioning to satisfy the performance requirements. The proposed framework is shown to effectively increase the transmission success probability compared to a baseline. Furthermore, an optimization problem is formulated to increase sum-rate and reliability by adjusting target received powers. Under different fading channels, the optimal target received powers are analyzed, and a tradeoff between reliability and sum-rate is shown. In conclusion, the theoretical and performance analysis of the frameworks proposed in this dissertation will prove essential for implementing an appropriate distributed resource allocation mechanisms for dynamic, heterogeneous IoT environments.
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    Energy band alignment of atomic layer deposited HfO2 on epitaxial (110)Ge grown by molecular beam epitaxy
    Hudait, Mantu K.; Zhu, Y.; Maurya, Deepam; Priya, Shashank (AIP Publishing, 2013-03-01)
    The band alignment properties of atomic layer HfO2 film deposited on epitaxial (110)Ge, grown by molecular beam epitaxy, was investigated using x-ray photoelectron spectroscopy. The cross-sectional transmission electron microscopy exhibited a sharp interface between the (110)Ge epilayer and the HfO2 film. The measured valence band offset value of HfO2 relative to (110)Ge was 2.28 +/- 0.05 eV. The extracted conduction band offset value was 2.66 +/- 0.1 eV using the bandgaps of HfO2 of 5.61 eV and Ge bandgap of 0.67 eV. These band offset parameters and the interface chemical properties of HfO2/(110)Ge system are of tremendous importance for the design of future high hole mobility and low-power Ge-based metal-oxide transistor devices. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4794838]
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    Energy band alignment of atomic layer deposited HfO2 oxide film on epitaxial (100)Ge, (110)Ge, and (111)Ge layers
    Hudait, Mantu K.; Zhu, Yan (American Institute of Physics, 2013-03-21)
    Crystallographically oriented epitaxial Ge layers were grown on (100), (110), and (111) A GaAs substrates by in situ growth process using two separate molecular beam epitaxy chambers. The band alignment properties of atomic layer hafnium oxide (HfO2) film deposited on crystallographically oriented epitaxial Ge were investigated using x-ray photoelectron spectroscopy (XPS). Valence band offset, DEv values of HfO2 relative to (100) Ge, (110) Ge, and (111) Ge orientations were 2.8 eV, 2.28 eV, and 2.5 eV, respectively. Using XPS data, variation in valence band offset, Delta E-V(100)Ge > Delta E-V(111)Ge > Delta E-V(110)Ge, was obtained related to Ge orientation. Also, the conduction band offset, DEc relation, Delta E-c(110)Ge > Delta E-c(111)Ge > Delta E-c(100)Ge related to Ge orientations was obtained using the measured bandgap of HfO2 on each orientation and with the Ge bandgap of 0.67 eV. These band offset parameters for carrier confinement would offer an important guidance to design Ge-based p-and n- channel metal-oxide field-effect transistor for low-power application. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4795284]
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    Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
    Ali, A.; Madan, H. S.; Kirk, A. P.; Zhao, D. A.; Mourey, D. A.; Hudait, Mantu K.; Wallace, R. M.; Jackson, T. N.; Bennett, B. R.; Boos, J. B.; Datta, Suman (AIP Publishing, 2010-10-01)
    N-type and p-type GaSb metal-oxide-semiconductor capacitors (MOSCAPs) with atomic-layer-deposited (ALD) and plasma-enhanced-ALD (PEALD) Al2O3 dielectrics are studied to identify the optimum surface preparation and oxide deposition conditions for a high quality oxide-semiconductor interface. The ALD Al2O3/GaSb MOSCAPs exhibit strongly pinned C-V characteristics with high interface state density (D-it) whereas the PEALD Al2O3/GaSb MOSCAPs show unpinned C-V characteristics (low D-it). The reduction in Sb2O3 to metallic Sb is suppressed for the PEALD samples due to lower process temperature, identified by x-ray photoelectron spectroscopy analysis. Absence of elemental Sb is attributed to unpinning of Fermi level at the PEALD Al2O3/GaSb interface. (C) 2010 American Institute of Physics. [doi:10.1063/1.3492847]