Scholarly Works, Materials Science and Engineering (MSE)
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Browsing Scholarly Works, Materials Science and Engineering (MSE) by Department "Center for Energy Harvesting Materials and Systems (CEHMS)"
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- Dual-phase self-biased magnetoelectric energy harvesterZhou, Yuan; Apo, Daniel J.; Priya, Shashank (AIP Publishing, 2013-11-01)We report a magnetoelectric energy harvester structure that can simultaneously scavenge magnetic and vibration energy in the absence of DC magnetic field. The structure consisted of a piezoelectric macro-fiber composite bonded to a Ni cantilever. Large magnetoelectric coefficient similar to 50 V/cm Oe and power density similar to 4.5 mW/cm(3) (1 g acceleration) were observed at the resonance frequency. An additive effect was realized when the harvester operated under dual-phase mode. The increase in voltage output at the first three resonance frequencies under dual-phase mode was found to be 2.4%, 35.5%, and 360.7%. These results present significant advancement toward high energy density multimode energy harvesting system. (C) 2013 AIP Publishing LLC.
- Energy band alignment of atomic layer deposited HfO2 on epitaxial (110)Ge grown by molecular beam epitaxyHudait, Mantu K.; Zhu, Y.; Maurya, Deepam; Priya, Shashank (AIP Publishing, 2013-03-01)The band alignment properties of atomic layer HfO2 film deposited on epitaxial (110)Ge, grown by molecular beam epitaxy, was investigated using x-ray photoelectron spectroscopy. The cross-sectional transmission electron microscopy exhibited a sharp interface between the (110)Ge epilayer and the HfO2 film. The measured valence band offset value of HfO2 relative to (110)Ge was 2.28 +/- 0.05 eV. The extracted conduction band offset value was 2.66 +/- 0.1 eV using the bandgaps of HfO2 of 5.61 eV and Ge bandgap of 0.67 eV. These band offset parameters and the interface chemical properties of HfO2/(110)Ge system are of tremendous importance for the design of future high hole mobility and low-power Ge-based metal-oxide transistor devices. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4794838]
- Enhanced piezoelectricity and nature of electric-field induced structural phase transformation in textured lead-free piezoelectric Na0.5Bi0.5TiO3-BaTiO3 ceramicsMaurya, Deepam; Pramanick, Abhijit; An, Ke; Priya, Shashank (AIP Publishing, 2012-04-01)This letter provides a comparative description of the properties of textured and randomly oriented poly-crystalline lead-free piezoelectric 0.93(Na0.5Bi0.5TiO3)-0.07BaTiO(3) (NBT-BT) ceramics. A high longitudinal piezoelectric constant of (d(33)) similar to 322 pC/N was obtained in (001)(PC) textured NBT-7BT ceramics, which is almost similar to 2x times the d(33) coefficient reported for randomly oriented ceramics of the same composition. In situ neutron diffraction experiments revealed that characteristically different structural responses are induced in textured and randomly oriented NBT-BT ceramics upon application of electric fields (E), which are likely related to the varying coherence lengths of polar nanoregions and internal stresses induced by domain switching. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4709404]
- Giant energy density in 001 -textured Pb(Mg1/3Nb2/3)O-3-PbZrO3-PbTiO3 piezoelectric ceramicsYan, Yongke; Cho, Kyung-Hoon; Maurya, Deepam; Kumar, Amit; Kalinin, Sergei; Khachaturyan, Armen G.; Priya, Shashank (AIP Publishing, 2013-01-01)Pb(Zr,Ti)O-3 (PZT) based compositions have been challenging to texture or grow in a single crystal form due to the incongruent melting point of ZrO2. Here we demonstrate the method for achieving 90% textured PZT-based ceramics and further show that it can provide highest known energy density in piezoelectric materials through enhancement of piezoelectric charge and voltage coefficients (d and g). Our method provides more than similar to 5x increase in the ratio d(textured)/d(random). A giant magnitude of d.g coefficient with value of 59 000 x 10(-15) m(2) N-1 (comparable to that of the single crystal counterpart and 359% higher than that of the best commercial compositions) was obtained. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4789854]
- Giant magnetoelectric coupling in laminate thin film structure grown on magnetostrictive substratePark, Chee-Sung; Khachaturyan, Armen G.; Priya, Shashank (AIP Publishing, 2012-05-01)Highly dense 1 mu m-thick piezoelectric film was deposited on magnetostrictive substrate [platinized nickel-zinc ferrite (NZF)]. A strong magnetic coupling between the piezoelectric film and magnetostrictive NZF substrate was measured exhibiting the maximum magnetoelectric (ME) coefficient on the order of 140 mV/cm Oe at the conditions of H-DC = 50 Oe and H-AC = 1Oe at f = 1 kHz. This giant ME coupling under low DC magnetic field condition is attributed to effective elastic coupling. A rotation-type dynamic strain distribution was observed on the PZT film surface which provides information about the nature of elastic coupling. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4712132]
- Giant self-biased magnetoelectric coupling in co-fired textured layered compositesYan, Yongke; Zhou, Yuan; Priya, Shashank (AIP Publishing, 2013-02-01)Co-fired magnetostrictive/piezoelectric/magnetostrictive laminate structure with silver inner electrode was synthesized and characterized. We demonstrate integration of textured piezoelectric microstructure with the cost-effective low-temperature co-fired layered structure to achieve strong magnetoelectric coupling. Using the co-fired composite, a strategy was developed based upon the hysteretic response of nickel-copper-zinc ferrite magnetostrictive materials to achieve peak magnetoelectric response at zero DC bias, referred as self-biased magnetoelectric response. Fundamental understanding of self-bias phenomenon in composites with single phase magnetic material was investigated by quantifying the magnetization and piezomagnetic changes with applied DC field. We delineate the contribution arising from the interfacial strain and inherent magnetic hysteretic behavior of copper modified nickel-zinc ferrite towards self-bias response. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4791685]
- Giant strain with ultra-low hysteresis and high temperature stability in grain oriented lead-free K0.5Bi0.5TiO3-BaTiO3-Na0.5Bi0.5TiO3 piezoelectric materialsMaurya, Deepam; Zhou, Yuan; Wang, Yaojin; Yan, Yongke; Li, Jiefang; Viehland, Dwight D.; Priya, Shashank (Springer Nature, 2015-02-26)We synthesized grain-oriented lead-free piezoelectric materials in (K0.5Bi0.5TiO3-BaTiO3-xNa(0.5)Bi(0.5)TiO(3) (KBT-BT-NBT) system with high degree of texturing along the [001]c (c-cubic) crystallographic orientation. We demonstrate giant field induced strain (similar to 0.48%) with an ultra-low hysteresis along with enhanced piezoelectric response (d(33) similar to 190pC/N) and high temperature stability (similar to 160 degrees C). Transmission electron microscopy (TEM) and piezoresponse force microscopy (PFM) results demonstrate smaller size highly ordered domain structure in grain-oriented specimen relative to the conventional polycrystalline ceramics. The grain oriented specimens exhibited a high degree of non-180 degrees domain switching, in comparison to the randomly axed ones. These results indicate the effective solution to the lead-free piezoelectric materials.
- Low-frequency nanotesla sensitivity in Metglas/piezoelectric/carbon fiber/piezoelectric composites with active tip massPark, Chee-Sung; Avirovik, Dragan; Bressers, Scott; Priya, Shashank (AIP Publishing, 2011-02-01)We report nanotesla sensitivity in Metglas/piezoelectric/carbon fiber/piezoelectric laminates with active tip mass operating in the vicinity of second bending mode. The peak magnetoelectric response for the laminate with an active tip mass (1 g) in longitudinal-transversal mode under H(dc)=8 Oe and H(ac)=1 Oe was found to be similar to 1.08 V/cm Oe at 43 Hz (first bending mode) and similar to 19 V/cm Oe at 511 Hz (second bending mode). At the standard 1 kHz frequency, the maximum resolution of 5 nT was measured under H(ac)=0.5 Oe. (C) 2011 American Institute of Physics. [doi:10.1063/1.3552970]
- Magnetoelectric Interactions in Lead-Based and Lead-Free CompositesBichurin, Mirza I.; Petrov, Vladimir M.; Zakharov, Anatoly; Kovalenko, Denis; Yang, Su-Chul; Maurya, Deepam; Bedekar, Vishwas; Priya, Shashank (MDPI, 2011-04-06)Magnetoelectric (ME) composites that simultaneously exhibit ferroelectricity and ferromagnetism have recently gained significant attention as evident by the increasing number of publications. These research activities are direct results of the fact that multiferroic magnetoelectrics offer significant technological promise for multiple devices. Appropriate choice of phases with co-firing capability, magnetostriction and piezoelectric coefficient, such as Ni-PZT and NZFO-PZT, has resulted in fabrication of prototype components that promise transition. In this manuscript, we report the properties of Ni-PZT and NZFO-PZT composites in terms of ME voltage coefficients as a function of frequency and magnetic DC bias. In order to overcome the problem of toxicity of lead, we have conducted experiments with Pb-free piezoelectric compositions. Results are presented on the magnetoelectric performance of Ni-NKN, Ni-NBTBT and NZFO-NKN, NZFO-NBTBT systems illustrating their importance as an environmentally friendly alternative.
- Metal-ceramic laminate composite magnetoelectric gradiometerBedekar, Vishwas; Bichurin, Mirza I.; Ivanov, Sergey N.; Pukinskiy, Yuri J.; Priya, Shashank (AIP Publishing, 2010-03-01)Gradiometer resembles in functionality a magnetic field sensor where it measures the magnetic field gradient and its sensitivity is determined by the ability to quantify differential voltage change with respect to a reference value. Magnetoelectric (ME) gradiometer designed in this study is based upon the nickel (Ni)-Pb(Zr,Ti)O(3) (PZT) composites and utilizes the ring-dot piezoelectric transformer structure working near the resonance as the basis. The samples had the ring-dot electrode pattern printed on the top surface of PZT, where ring acts as the input while dot acts as the output. There is an insulation gap between the input and output section of 1.2 mm. The generated magnetic field due to converse ME effect interacts with the external applied magnetic field producing flux gradient, which is detected through the frequency shift and output voltage change in gradiometer structure. The measurements of output voltage dependence on applied magnetic field clearly illustrate that the proposed design can provide high sensitivity and bandwidth.
- Self-assembled NaNbO3-Nb2O5 (ferroelectric-semiconductor) heterostructures grown on LaAlO3 substratesWang, Zhiguang; Li, Yanxi; Chen, Bo; Viswan, Ravindranath; Li, Jiefang; Viehland, Dwight D. (AIP Publishing, 2012-09-01)We deposited NaNbO3 (NNO)-Nb2O5 (NO) self-assembled heterostructures on LaAlO3 (LAO) to form ferroelectric-semiconductor vertically integrated nanostructures. The NNO component formed as nanorods embedded in a NO matrix. X-ray diffraction confirmed epitaxial growth of both NNO and NO phases. Phase distribution was detected by scanning electron microscopy. The NNO/NO volume ratio was strongly dependent on the deposition temperature due to the volatility of sodium. Piezoelectric force microscopy revealed a good piezoelectric response in the NNO component with a piezoelectric coefficient of D-33 approximate to 12 pm/V, with SrRuO3 (SRO) acting as bottom electrode. The current-voltage characterization of NNO-NO/SRO-LAO showed a typical diode rectifying behavior. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4754713]
- Tunable self-biased magnetoelectric response in homogenous laminatesZhou, Yuan; Yang, Su-Chul; Apo, Daniel J.; Maurya, Deepam; Priya, Shashank (AIP Publishing, 2012-12-01)In this study, we demonstrate self-biased magnetoelectric effect in homogenous two-phase magnetostrictive-piezoelectric laminates. Our results illustrate the method for tuning the magnitude of self-bias effect and provide understanding behind the hysteretic changes. We model this phenomenon by considering the magnetization hysteresis with shape-induced demagnetization effect. The self-biased response was found to be directly related to the nature of magnetization and can be tuned by variation in demagnetization state and the resultant differential magnetic flux distribution. These results present significant advancement toward development of AC magnetic field sensor and magnetoelectric composite based on-chip devices by eliminating the need for DC bias. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769365]
- Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxyHudait, Mantu K.; Zhu, Y.; Johnston, Steve W.; Maurya, Deepam; Priya, Shashank; Umbel, Rachel (AIP Publishing, 2013-03-01)GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendellosung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 mu m GaAs/(100) GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 mu s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4794984]