Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy

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Date
2013-03-01
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AIP Publishing
Abstract

GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendellosung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 mu m GaAs/(100) GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 mu s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4794984]

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Keywords
Minority-carrier lifetime, Electronic-structure, Gaas, GE, SI, Cells, Interfaces, Impact, Physics
Citation
Hudait, M. K.; Zhu, Y.; Johnston, S. W.; et al., "Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy," Appl. Phys. Lett. 102, 093119 (2013); http://dx.doi.org/10.1063/1.4794984