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    Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy

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    Date
    2013-03-01
    Author
    Hudait, Mantu K.
    Zhu, Y.
    Johnston, S. W.
    Maurya, Deepam
    Priya, Shashank
    Umbel, R.
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    Abstract
    GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendellosung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 mu m GaAs/(100) GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 mu s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4794984]
    URI
    http://hdl.handle.net/10919/24925
    Collections
    • Scholarly Works, Center for Energy Harvesting Materials and Systems (CEHMS) [61]
    • Scholarly Works, Department of Mechanical Engineering [312]
    • Scholarly Works, Electrical and Computer Engineering [531]
    • Scholarly Works, Materials Science and Engineering (MSE) [376]

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