Spin and phase coherence measured by antilocalization in n-InSb thin films
Kallaher, R. L.
Heremans, J. J.
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The spin and phase coherence times of the itinerant electrons in n-InSb thin films were experimentally determined by analyzing the low-temperature magnetoresistance in antilocalization theory. The results indicate a very weak temperature dependence below 10 K for the spin coherence time. The dependence of the spin coherence time on carrier density demonstrates that the Elliott-Yafet mechanism is predominantly responsible for electron-spin relaxation in n-type InSb at low temperatures. The phase coherence time follows an inverse temperature dependence, in accordance with the electron-electron Nyquist dephasing mechanism.