Spin and phase coherence measured by antilocalization in n-InSb thin films

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dc.contributorVirginia Techen
dc.contributor.authorKallaher, R. L.en
dc.contributor.authorHeremans, Jean J.en
dc.contributor.departmentPhysicsen
dc.date.accessed2013-12-18en
dc.date.accessioned2014-02-11T13:46:02Zen
dc.date.available2014-02-11T13:46:02Zen
dc.date.issued2009-02-25en
dc.description.abstractThe spin and phase coherence times of the itinerant electrons in n-InSb thin films were experimentally determined by analyzing the low-temperature magnetoresistance in antilocalization theory. The results indicate a very weak temperature dependence below 10 K for the spin coherence time. The dependence of the spin coherence time on carrier density demonstrates that the Elliott-Yafet mechanism is predominantly responsible for electron-spin relaxation in n-type InSb at low temperatures. The phase coherence time follows an inverse temperature dependence, in accordance with the electron-electron Nyquist dephasing mechanism.en
dc.description.sponsorshipNSF DMR-0618235en
dc.description.sponsorshipMARTECH, Florida State Universityen
dc.identifier.citationKallaher, R. L. ; Heremans, J. J., Feb 2009. "Spin and phase coherence measured by antilocalization in n-InSb thin films," PHYSICAL REVIEW B 79(7): 075322. DOI: 10.1103/PhysRevB.79.075322en
dc.identifier.doihttps://doi.org/10.1103/PhysRevB.79.075322en
dc.identifier.issn1098-0121en
dc.identifier.urihttp://hdl.handle.net/10919/25412en
dc.identifier.urlhttp://link.aps.org/doi/10.1103/PhysRevB.79.075322en
dc.language.isoen_USen
dc.publisherAmerican Physical Societyen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectband model of magnetismen
dc.subjectcarrier densityen
dc.subjectelectron spin polarisationen
dc.subjectindium compoundsen
dc.subjectlocalised statesen
dc.subjectmagnetoresistanceen
dc.subjectnarrow band gapen
dc.subjectsemiconductorsen
dc.subjectNyquist criterionen
dc.subjectsemiconductor thin filmsen
dc.subjectweak-field magnetoresistanceen
dc.subjectelectron scatteringen
dc.subjectlocalizationen
dc.subjectsemiconductorsen
dc.subjectsurfaceen
dc.subjectsystemen
dc.subjectbehavioren
dc.subjectsensorsen
dc.subjectPhysicsen
dc.titleSpin and phase coherence measured by antilocalization in n-InSb thin filmsen
dc.title.serialPhysical Review Ben
dc.typeArticle - Refereeden

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