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dc.contributor.authorChern, Kevin Tsun-Jenen_US
dc.date.accessioned2014-03-14T20:44:04Z
dc.date.available2014-03-14T20:44:04Z
dc.date.issued2009-06-25en_US
dc.identifier.otheretd-08232010-154125en_US
dc.identifier.urihttp://hdl.handle.net/10919/34717
dc.description.abstractMore efficient semiconductor lasers will be needed in tomorrowâ s applications. These lasers can only be realized through the application of new device processing techniques, designed to restrict current, carrier, and/or photon flow through the lasing cavity. This work aims to evaluate a non-conventional stripe laser processing technique which has the potential for effective current and possibly carrier confinement at low cost. This technique, referred to as hydrogen passivation, involves exposing laser material to a low energy hydrogen plasma, causing hydrogen ions to bind to charged acceptor and donor atoms. Such binding compensates the electrical activity of these dopant atoms and thereby increases the resistance of the exposed material. Optical confinement can also be achieved (subsequent to hydrogenation) by using a simple wet-etching process to form a lateral waveguide. Stripe lasers fabricated via hydrogen passivation have been demonstrated previously; however, the benefits of this method have not been fully explored or characterized. Our work aims to quantify the degree of current and carrier confinement provided by this technique. The cleaved cavity method of analysis is used to extract laser parameters via direct measurement. These parameters are then compared against those obtained from more conventional stripe lasers to identify improvements that have accrued from using hydrogen passivation.en_US
dc.publisherVirginia Techen_US
dc.relation.haspartChern_KT_T_2009.pdfen_US
dc.rightsI hereby certify that, if appropriate, I have obtained and attached hereto a written permission statement from the owner(s) of each third party copyrighted matter to be included in my thesis, dissertation, or project report, allowing distribution as specified below. I certify that the version I submitted is the same as that approved by my advisory committee. I hereby grant to Virginia Tech or its agents the non-exclusive license to archive and make accessible, under the conditions specified below, my thesis, dissertation, or project report in whole or in part in all forms of media, now or hereafter known. I retain all other ownership rights to the copyright of the thesis, dissertation or project report. I also retain the right to use in future works (such as articles or books) all or part of this thesis, dissertation, or project report.en_US
dc.subjectQuantum well laseren_US
dc.subjectOptical gainen_US
dc.subjectDevice fabricationen_US
dc.subjectSemiconductor laseren_US
dc.titleFabrication and Characterization of Narrow-Stripe Quantum Well Laser Diodesen_US
dc.typeThesisen_US
dc.contributor.departmentElectrical and Computer Engineeringen_US
dc.description.degreeMaster of Scienceen_US
thesis.degree.nameMaster of Scienceen_US
thesis.degree.levelmastersen_US
thesis.degree.grantorVirginia Polytechnic Institute and State Universityen_US
thesis.degree.disciplineElectrical and Computer Engineeringen_US
dc.contributor.committeechairGuido, Louis J.en_US
dc.contributor.committeememberAsryan, Levon V.en_US
dc.contributor.committeememberLu, Guo-Quanen_US
dc.contributor.committeememberHendricks, Robert W.en_US
dc.identifier.sourceurlhttp://scholar.lib.vt.edu/theses/available/etd-08232010-154125/en_US
dc.date.sdate2010-08-23en_US
dc.date.rdate2010-09-17
dc.date.adate2010-09-17en_US


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