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dc.contributorVirginia Tech
dc.contributor.authorHoltz, M.
dc.contributor.authorSauncy, T.
dc.contributor.authorDallas, T.
dc.contributor.authorMassie, S.
dc.date.accessioned2014-05-07T15:36:55Z
dc.date.available2014-05-07T15:36:55Z
dc.date.issued1994-11
dc.identifier.citationHoltz, M.; Sauncy, T.; Dallas, T.; Massie, S., "Effect of pressure on defect-related emission in heavily silicon-doped GaAs," Phys. Rev. B 50, 14706(R) DOI: http://dx.doi.org/10.1103/PhysRevB.50.14706
dc.identifier.issn0163-1829
dc.identifier.urihttp://hdl.handle.net/10919/47832
dc.description.abstractWe report cryogenic high-pressure measurements of a defect-related emission at 1.25 eV in silicon-doped GaAs. The pressure measurements prove that the 1.25-eV photon energy is relative to the conduction band, implying a deep defect level 0.30 eV above the valence band and an electron-capture process from the conduction band into the defect. The defect level moves up in the band gap at a rate of 23±3 meV/GPa. These results are consistent with a vacancy-related defect level, possibly stemming from a gallium-vacancy–silicon-at-gallium (second-nearest-neighbor) defect complex.
dc.language.isoen_US
dc.publisherAmerican Physical Society
dc.subjecthydrostatic-pressure
dc.subjectgallium-arsenide
dc.subjectdeep donors
dc.subjectdx center
dc.subjectphotoluminescence
dc.subjectdependence
dc.subjectel2
dc.subjectsi
dc.subjectphysics, condensed matter
dc.titleEffect of pressure on defect-related emission in heavily silicon-doped GaAs
dc.typeArticle
dc.identifier.urlhttp://journals.aps.org/prb/abstract/10.1103/PhysRevB.50.14706
dc.date.accessed2014-04-23
dc.title.serialPhysical Review B
dc.identifier.doihttps://doi.org/10.1103/PhysRevB.50.14706


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