Effect of pressure on defect-related emission in heavily silicon-doped GaAs

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dc.contributorVirginia Techen
dc.contributor.authorHoltz, M.en
dc.contributor.authorSauncy, T.en
dc.contributor.authorDallas, T.en
dc.contributor.authorMassie, S.en
dc.contributor.departmentPhysicsen
dc.date.accessed2014-04-23en
dc.date.accessioned2014-05-07T15:36:55Zen
dc.date.available2014-05-07T15:36:55Zen
dc.date.issued1994-11en
dc.description.abstractWe report cryogenic high-pressure measurements of a defect-related emission at 1.25 eV in silicon-doped GaAs. The pressure measurements prove that the 1.25-eV photon energy is relative to the conduction band, implying a deep defect level 0.30 eV above the valence band and an electron-capture process from the conduction band into the defect. The defect level moves up in the band gap at a rate of 23±3 meV/GPa. These results are consistent with a vacancy-related defect level, possibly stemming from a gallium-vacancy–silicon-at-gallium (second-nearest-neighbor) defect complex.en
dc.identifier.citationHoltz, M.; Sauncy, T.; Dallas, T.; Massie, S., "Effect of pressure on defect-related emission in heavily silicon-doped GaAs," Phys. Rev. B 50, 14706(R) DOI: http://dx.doi.org/10.1103/PhysRevB.50.14706en
dc.identifier.doihttps://doi.org/10.1103/PhysRevB.50.14706en
dc.identifier.issn0163-1829en
dc.identifier.urihttp://hdl.handle.net/10919/47832en
dc.identifier.urlhttp://journals.aps.org/prb/abstract/10.1103/PhysRevB.50.14706en
dc.language.isoen_USen
dc.publisherAmerican Physical Societyen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjecthydrostatic-pressureen
dc.subjectgallium-arsenideen
dc.subjectdeep donorsen
dc.subjectdx centeren
dc.subjectphotoluminescenceen
dc.subjectdependenceen
dc.subjectel2en
dc.subjectsien
dc.subjectphysics, condensed matteren
dc.titleEffect of pressure on defect-related emission in heavily silicon-doped GaAsen
dc.title.serialPhysical Review Ben
dc.typeArticle - Refereeden

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