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dc.contributorVirginia Tech. Physics Departmenten_US
dc.contributorNational High Magnetic Field Laboratoryen_US
dc.contributorNaval Research Laboratoryen_US
dc.contributorNational Renewable Energy Laboratoryen_US
dc.contributorUniversity of California, Santa Barbara. Department of Electrical and Computer Engineeringen_US
dc.contributor.authorMerritt, T. R.en_US
dc.contributor.authorMeeker, M. A.en_US
dc.contributor.authorMagill, Brenden A.en_US
dc.contributor.authorKhodaparast, Giti A.en_US
dc.contributor.authorMcGill, S.en_US
dc.contributor.authorTischler, J. G.en_US
dc.contributor.authorChoi, S. G.en_US
dc.contributor.authorPalmstrom, C. J.en_US
dc.date.accessioned2015-05-21T15:46:25Z
dc.date.available2015-05-21T15:46:25Z
dc.date.issued2014-05-21en_US
dc.identifier.citationMerritt, T. R., Meeker, M. A., Magill, B. A., Khodaparast, G. A., McGill, S., Tischler, J. G., Choi, S. G., Palmstrom, C. J. (2014). Photoluminescence lineshape and dynamics of localized excitonic transitions in InAsP epitaxial layers. Journal of Applied Physics, 115(19). doi: 10.1063/1.4876121en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10919/52384
dc.description.abstractThe excitonic radiative transitions of InAsxP1-x (x = 0.13 and x = 0.40) alloy epitaxial layers were studied through magnetic field and temperature dependent photoluminescence and time-resolved photoluminescence spectroscopy. While the linewidth and lineshape of the exciton transition for x = 0.40 indicate the presence of alloy broadening due to random anion distribution and the existence of localized exciton states, those of x = 0.13 suggest that this type of compositional disorder is absent in x = 0.13. This localization is further supported by the behavior of the exciton transitions at low temperature and high magnetic fields. InAs0.4P0.6 exhibits anomalous "S-shaped" temperature dependence of the excition emission peak below 100K as well as linewidth broadening at high magnetic fields due to the compression of the excitonic volume amid compositional fluctuations. Finally, photoluminescence decay patterns suggest that the excitons radiatively relax through two channels, a fast and a slow decay. While the lifetime of the fast decay is comparable for both compositions (similar to 30 ps), that of the slow decay increases from 206 ps to 427 ps as x increases from 0.13 to 0.40, attributable to carrier migration between the localization states of InAs0.4P0.6. (C) 2014 AIP Publishing LLC.en_US
dc.description.sponsorshipNational Science Foundation - Career Award DMR-0846834en_US
dc.description.sponsorshipNational High Magnetic Field Laboratory - National Science Foundation Cooperative Agreement No. DMR-1157490en_US
dc.description.sponsorshipFloridaen_US
dc.description.sponsorshipU.S. Department of Energyen_US
dc.description.sponsorshipUCGPen_US
dc.format.extent9 pagesen_US
dc.format.mimetypeapplication/pdfen_US
dc.language.isoen_USen_US
dc.publisherAmerican Institute of Physicsen_US
dc.subjectExcitonsen_US
dc.subjectPhotoluminescenceen_US
dc.subjectLinewidthsen_US
dc.subjectMagnetic fieldsen_US
dc.subjectBand gapen_US
dc.titlePhotoluminescence lineshape and dynamics of localized excitonic transitions in InAsP epitaxial layersen_US
dc.typeArticle - Refereeden_US
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/jap/115/19/10.1063/1.4876121en_US
dc.date.accessed2015-04-24en_US
dc.title.serialJournal of Applied Physicsen_US
dc.identifier.doihttps://doi.org/10.1063/1.4876121
dc.type.dcmitypeTexten_US


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