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dc.contributor.authorTäuber, Uwe C.en
dc.contributor.authorNelson, David R.en
dc.date.accessioned2016-09-30T00:20:09Zen
dc.date.available2016-09-30T00:20:09Zen
dc.date.issued1995-12-01en
dc.identifier.issn0163-1829en
dc.identifier.urihttp://hdl.handle.net/10919/73075en
dc.description.abstractWe study the ground state and low energy excitations of vortices pinned to columnar defects in superconductors, taking into account the long–range interaction between the fluxons. We consider the “underfilled” situation in the Bose glass phase, where each flux line is attached to one of the defects, while some pins remain unoccupied. By exploiting an analogy with disordered semiconductors, we calculate the spatial configurations in the ground state, as well as the distribution of pinning energies, using a zero–temperature Monte Carlo algorithm minimizing the total energy with respect to all possible one–vortex transfers. Intervortex repulsion leads to strong correlations whenever the London penetration depth exceeds the fluxon spacing. A pronounced peak appears in the static structure factor S(q) for low filling fractions f 0.3. Interactions lead to a broad Coulomb gap in the distribution of pinning energies g(ǫ) near the chemical potential μ, separating the occupied and empty pins. The vanishing of g(ǫ) at μ leads to a considerable reduction of variable–range hopping vortex transport by correlated flux line pinning.en
dc.format.extent16106 - 16124 page(s)en
dc.language.isoenen
dc.relation.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1995TL81300064&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=930d57c9ac61a043676db62af60056c1en
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.titleInteractions and pinning energies in the Bose glass phase of vortices in superconductorsen
dc.typeArticle - Refereeden
dc.contributor.departmentPhysicsen
dc.description.notesPublished (Publication status)en
dc.title.serialPHYSICAL REVIEW Ben
dc.identifier.doihttps://doi.org/10.1103/PhysRevB.52.16106en
dc.identifier.volume52en
dc.identifier.issue22en
pubs.organisational-group/Virginia Techen
pubs.organisational-group/Virginia Tech/All T&R Facultyen
pubs.organisational-group/Virginia Tech/Scienceen
pubs.organisational-group/Virginia Tech/Science/COS T&R Facultyen
pubs.organisational-group/Virginia Tech/Science/Physicsen


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