Millimeter-Wave Harmonically-Tuned Silicon Power Amplifiers for High Efficiency

TR Number
Date
2016-09-09
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Journal ISSN
Volume Title
Publisher
Virginia Tech
Abstract

This works demonstrates the feasibility of the inverse-Class-F harmonic tuning approach for mm-wave silicon PAs. This research addresses the challenges and limitations of the high efficiency inverse-Class-F PAs for mm-wave silicon technology. This work proposes different load networks to mitigate the challenges which are verified with implementations at different mm-wave frequencies with the highest power efficiency performances reported so far: PAE= 50% @ 24 GHz, PAE = 43% @ 41 GHz, and PAE = 23% @ 94 GHz. The design methodology and detailed analysis of the proposed load networks presented and verified with implementation and measured results.

Description
Keywords
Class-F, class-F-1, 5G, harmonic tuned power amplifier, inverse class F, 28 GHz, 38 GHz, Ka-band PA, SiGe PA
Citation