VTechWorks staff will be away for the winter holidays starting Tuesday, December 24, 2024, through Wednesday, January 1, 2025, and will not be replying to requests during this time. Thank you for your patience, and happy holidays!
 

RF Models for Active IPEMs

Simple item page
dc.contributor.authorQian, Jingenen
dc.contributor.committeechairvan Wyk, Jacobus Danielen
dc.contributor.committeecochairOdendaal, Willem Gerhardusen
dc.contributor.committeememberChen, Dan Y.en
dc.contributor.departmentElectrical and Computer Engineeringen
dc.date.accessioned2014-03-14T20:31:29Zen
dc.date.adate2003-02-06en
dc.date.available2014-03-14T20:31:29Zen
dc.date.issued2003-01-31en
dc.date.rdate2004-02-06en
dc.date.sdate2003-02-05en
dc.description.abstractExploring RF models for an integrated power electronics module (IPEM) is crucial to analyzing and predicting its EMI performance. This thesis deals with the parasitics extraction approach for an active IPEM in a frequency range of 1MHz through 30MHz. Based on the classic electromagnetic field theory, the calculating equations of DC and AC parameters for a 3D conducting structure are derived. The influence of skin effect and proximity effect on AC resistances and inductances is also investigated at high frequencies. To investigate RF models and EMI performance of the IPEM, a 1kW 1MHz series resonant DC-DC converter (SRC) is designed and fabricated in this work. For extracting the stray parameters of the built IPEM, two main software simulation tools ¡ª Maxwell Quick 3D Parameter Extractor (Maxwell Q3D) and Maxwell 3D Field Simulator (Maxwell 3D), prevailing electromagnetic simulation products from Ansoft Corporation, are introduced in this study. By trading off between the numerical accuracy and computational economy (CPU time and consumption of memory size), Maxwell Q3D is chosen in this work to extract the parameters for the full bridge IPEM structure. The step-by-step procedure of using Maxwell Q3D is presented from pre-processing the 3D IPEM structure to post-processing the solutions, and exporting equivalent circuit for PSpice simulations as well. RF modeling of power MOSFETs is briefly introduced. In order to verify extracted parameters, in-circuit impedance measurements for the IPEM using Agilent 4294A Impedance Analyzer together with Agilent 42941A probe are then followed. Measured results basically verify the extracted data, while the discrepancy between measured results and simulated results is also analyzed.en
dc.description.degreeMaster of Scienceen
dc.identifier.otheretd-02052003-162036en
dc.identifier.sourceurlhttp://scholar.lib.vt.edu/theses/available/etd-02052003-162036/en
dc.identifier.urihttp://hdl.handle.net/10919/31138en
dc.publisherVirginia Techen
dc.relation.haspartJingenqian_Thesis.pdfen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectelectromagnetic interference (EMI)en
dc.subjectintegrated power electronic module (IPEM)en
dc.subjectimpedanceen
dc.subjectradio frequency (RF)en
dc.subjectparasitics extractionen
dc.titleRF Models for Active IPEMsen
dc.typeThesisen
thesis.degree.disciplineElectrical and Computer Engineeringen
thesis.degree.grantorVirginia Polytechnic Institute and State Universityen
thesis.degree.levelmastersen
thesis.degree.nameMaster of Scienceen

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
Jingenqian_Thesis.pdf
Size:
2.23 MB
Format:
Adobe Portable Document Format
Download

Collections

Masters Theses