Deposition and characterization of HfO₂ thin films

Simple item page
dc.contributor.authorZou, Shubingen
dc.contributor.departmentMaterials Science and Engineeringen
dc.date.accessioned2014-03-14T21:40:19Zen
dc.date.adate2009-07-11en
dc.date.available2014-03-14T21:40:19Zen
dc.date.issued1994en
dc.date.rdate2009-07-11en
dc.date.sdate2009-07-11en
dc.description.abstractHafnium Dioxide(HfO₂) thin films were deposited on glass, metal, and silicon wafer substrates using magnetron RF reactive sputtering techniques. Structure and morphology of the thin films were investigated by x-ray diffraction (XRD), transmission electron microscopy (TEM) and scanning electron microscopy (SEM). Results revealed that the sputtered HfO₂ thin films were (111) preferred oriented with single crystalline or polycrystalline natures. The sputtering parameters, including gas flow ratios of Ar/O₂, substrate temperature, pressure, and RF power levels, were examined, and their effects on the thin film structure and properties are discussed. Transparent hafnium oxide thin films can be deposited only when the RF power is lower than a certain level, which is limited by the gas flow ratio of Ar/O₂. High substrate temperature is critical for high (111) orientation in thin films while a high gas flow ratio of Ar/O₂ is important for crystal structure and adhesion. Annealing in oxygen atmosphere following the deposition was also found to be effective in improving thin film adhesion and resistance of losing adhesion during thermal cycles. Refractive index, and electrical resistance measurements show that HfO₂ thin films deposited by RF reactive sputtering under optimized conditions have promising electrical and optical properties which deserve further study.en
dc.description.degreeMaster of Scienceen
dc.format.extentix, 71 leavesen
dc.format.mediumBTDen
dc.format.mimetypeapplication/pdfen
dc.identifier.otheretd-07112009-040501en
dc.identifier.sourceurlhttp://scholar.lib.vt.edu/theses/available/etd-07112009-040501/en
dc.identifier.urihttp://hdl.handle.net/10919/43688en
dc.language.isoenen
dc.publisherVirginia Techen
dc.relation.haspartLD5655.V855_1994.Z68.pdfen
dc.relation.isformatofOCLC# 30658997en
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subject.lccLD5655.V855 1994.Z68en
dc.subject.lcshHafnium oxideen
dc.subject.lcshThin filmsen
dc.titleDeposition and characterization of HfO₂ thin filmsen
dc.typeThesisen
dc.type.dcmitypeTexten
thesis.degree.disciplineMaterials Science and Engineeringen
thesis.degree.grantorVirginia Polytechnic Institute and State Universityen
thesis.degree.levelmastersen
thesis.degree.nameMaster of Scienceen

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
LD5655.V855_1994.Z68.pdf
Size:
10.34 MB
Format:
Adobe Portable Document Format
Description:
Download

Collections

Masters Theses