Precision measurement of electron-electron scattering in GaAs/AlGaAs using transverse magnetic focusing

dc.contributor.authorGupta, Adbhuten
dc.contributor.authorHeremans, Jean J.en
dc.contributor.authorKataria, Gitanshen
dc.contributor.authorChandra, Manien
dc.contributor.authorFallahi, S.en
dc.contributor.authorGardner, G.C.en
dc.contributor.authorManfra, M.J.en
dc.date.accessioned2021-09-16T13:06:41Zen
dc.date.available2021-09-16T13:06:41Zen
dc.date.issued2021en
dc.description.abstractElectron-electron (e-e) interactions assume a cardinal role in solid-state physics. Quantifying the e-e scattering length is hence critical. In this paper we show that the mesoscopic phenomenon of transverse magnetic focusing (TMF) in two-dimensional electron systems forms a precise and sensitive technique to measure this length scale. Conversely we quantitatively demonstrate that e-e scattering is the predominant effect limiting TMF amplitudes in high-mobility materials. Using high-resolution kinetic simulations, we show that the TMF amplitude at a maximum decays exponentially as a function of the e-e scattering length, which leads to a ready approach to extract this length from the measured TMF amplitudes. The approach is applied to measure the temperature-dependent e-e scattering length in high-mobility GaAs/AlGaAs heterostructures. The simulations further reveal current vortices that accompany the cyclotron orbits - a collective phenomenon counterintuitive to the ballistic transport underlying a TMF setting.en
dc.description.sponsorshipA.G. and J.J.H. acknowledge support by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering under Award No. DEFG02- 08ER46532 for the conceptualization of the experiments, device fabrication, measurements, data analysis, and interpretation. The MBE growth and transport measurements at Purdue are supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering under Award No. DESC0020138. S.F., G.C.G., and M.J.M. also acknowledge support from Microsoft Quantum. A.G., J.J.H., G.K., and M.C. acknowledge computational resources (GPU clusters Cascades and NewRiver) and technical support provided by Advanced Research Computing at Virginia Tech. J.J.H. acknowledges a publication subvention from VT OASF.en
dc.format.mimetypeapplication/pdfen
dc.identifier.doihttps://doi.org/10.1038/s41467-021-25327-7en
dc.identifier.urihttp://hdl.handle.net/10919/105003en
dc.identifier.volume12en
dc.language.isoenen
dc.publisherNature Researchen
dc.rightsAttribution 4.0 Internationalen
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.titlePrecision measurement of electron-electron scattering in GaAs/AlGaAs using transverse magnetic focusingen
dc.title.serialNature Communicationsen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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