Design, Theoretical, and Experimental Investigation of Tensile-Strained Germanium Quantum-Well Laser Structure

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dc.contributor.authorHudait, Mantu K.en
dc.contributor.authorMurphy-Armando, Felipeen
dc.contributor.authorSaladukha, Dzianisen
dc.contributor.authorClavel, Michael B.en
dc.contributor.authorGoley, Patrick S.en
dc.contributor.authorMaurya, Deepamen
dc.contributor.authorBhattacharya, Shuvodipen
dc.contributor.authorOchalski, Tomasz J.en
dc.date.accessioned2022-02-20T20:05:23Zen
dc.date.available2022-02-20T20:05:23Zen
dc.date.issued2021-10-14en
dc.date.updated2022-02-20T20:05:18Zen
dc.description.abstractStrain and band gap engineered epitaxial germanium (ϵ-Ge) quantum-well (QW) laser structures were investigated on GaAs substrates theoretically and experimentally for the first time. In this design, we exploit the ability of an InGaAs layer to simultaneously provide tensile strain in Ge (0.7-1.96%) and sufficient optical and carrier confinement. The direct band-to-band gain, threshold current density (Jth), and loss mechanisms that dominate in the ϵ-Ge QW laser structure were calculated using first-principles-based 30-band k·p electronic structure theory, at injected carrier concentrations from 3 × 1018 to 9 × 1019 cm-3. The higher strain in the ϵ-Ge QW increases the gain at higher wavelengths; however, a decreasing thickness is required by higher strain due to critical layer thickness for avoiding strain relaxation. In addition, we predict that a Jth of 300 A/cm2 can be reduced to <10 A/cm2 by increasing strain from 0.2% to 1.96% in ϵ-Ge lasing media. The measured room-temperature photoluminescence spectroscopy demonstrated direct band gap optical emission, from the conduction band at the Γ-valley to heavy-hole (0.6609 eV) from 1.6% tensile-strained Ge/In0.24Ga0.76As heterostructure grown by molecular beam epitaxy, is in agreement with the value calculated using 30-band k·p theory. The detailed plan-view transmission electron microscopic (TEM) analysis of 0.7% and 1.2% tensile-strained ϵ-Ge/InGaAs structures exhibited well-controlled dislocations within each ϵ-Ge layer. The measured dislocation density is below 4 × 106 cm-2 for the 1.2% ϵ-Ge layer, which is an upper bound, suggesting the superior ϵ-Ge material quality. Structural analysis of the experimentally realistic 1.95% biaxially strained In0.28Ga0.72As/13 nm ϵ-Ge/In0.28Ga0.72As QW structure demonstrated a strained Ge/In0.28Ga0.72As heterointerface with minimal relaxation using X-ray and cross-sectional TEM analysis. Therefore, our monolithic integration of a strained Ge QW laser structure on GaAs and ultimately the transfer of the process to the Si substrate via an InGa(Al)As/III-V buffer architecture would provide a significant step toward photonic technology based on strained Ge on a Si platform.en
dc.description.versionAccepted versionen
dc.format.extentPages 4535-4547en
dc.format.extent13 page(s)en
dc.format.mimetypeapplication/pdfen
dc.identifier.doihttps://doi.org/10.1021/acsaelm.1c00660en
dc.identifier.eissn2637-6113en
dc.identifier.issn2637-6113en
dc.identifier.issue10en
dc.identifier.orcidHudait, Mantu [0000-0002-9789-3081]en
dc.identifier.urihttp://hdl.handle.net/10919/108777en
dc.identifier.volume3en
dc.language.isoenen
dc.publisherAmerican Chemical Societyen
dc.relation.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000711759300029&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=930d57c9ac61a043676db62af60056c1en
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectEngineering, Electrical & Electronicen
dc.subjectMaterials Science, Multidisciplinaryen
dc.subjectEngineeringen
dc.subjectMaterials Scienceen
dc.subjectgermaniumen
dc.subjectepitaxyen
dc.subjectmolecular beam epitaxyen
dc.subjectheterostructureen
dc.subjectlaseren
dc.subjectMONOLITHIC INTEGRATIONen
dc.subjectMISFIT DISLOCATIONSen
dc.subjectLIGHT-EMISSIONen
dc.subjectGEen
dc.subjectSIen
dc.subjectSILICONen
dc.subjectGAPen
dc.subjectGENERATIONen
dc.subjectDEPENDENCEen
dc.subjectEPITAXYen
dc.titleDesign, Theoretical, and Experimental Investigation of Tensile-Strained Germanium Quantum-Well Laser Structureen
dc.title.serialACS Applied Electronic Materialsen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten
dc.type.otherArticleen
dc.type.otherJournalen
pubs.organisational-group/Virginia Techen
pubs.organisational-group/Virginia Tech/Engineeringen
pubs.organisational-group/Virginia Tech/Engineering/Electrical and Computer Engineeringen
pubs.organisational-group/Virginia Tech/All T&R Facultyen
pubs.organisational-group/Virginia Tech/Engineering/COE T&R Facultyen

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