Metalorganic chemical vapor deposition of metal oxides

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dc.contributor.authorSi, Jieen
dc.contributor.departmentMaterials Science and Engineeringen
dc.date.accessioned2014-03-14T21:52:38Zen
dc.date.adate2008-12-30en
dc.date.available2014-03-14T21:52:38Zen
dc.date.issued1993en
dc.date.rdate2008-12-30en
dc.date.sdate2008-12-30en
dc.description.abstractRuthenium dioxide, zirconium dioxide and bismuth titanate thin films were deposited on Si, sapphire disks, and Pt/Ti/SiO₂/Si substrates by hot wall metalorganic chemical vapor deposition (MOCVD). Bis(cyclopentadienyl)ruthenium [Ru(C₅H₅)₂], zirconium tetramethylheptanedione [Zr(thd)₄], triphenylbismuth [Bi(C₆H₅)₃], and titanium ethoxide [Ti(C₂H₅O)₄] were used as precursors. MOCVD RuO₂ film structure was dependent on MOCVD process parameters such as bubbler temperature, dilute gas flow rates, deposition temperature, and total pressure. Either pure RuO₂, pure Ru, or a RuO₂ + Ru mixture was obtained under different deposition conditions. As-deposited pure RuO₂ films were specular, crack-free, and adhered well on the substrates. The Auger electron spectroscopy depth profile showed a good composition uniformity across the bulk of the films. The MOCVD RuO₂ thin films exhibited resistivities as low as 60 <i>μ</i>Ω-cm. In addition, the reflectance of RuO₂ in the NIR region showed a metallic character. Zr(thd)₄ was synthesized and the process was optimized. Purity of Zr(thd)₄ was confirmed by melting point determination, carbon and hydrogen elemental analysis and proton nuclear magnetic resonance spectrometer (NMR). The MOCVD ZrO₂ film deposition rates were very small (≤ 1 nm/min) for substrate temperatures below 530°C. The film deposition rates were significantly affected by: (1) source temperature, (2) substrate temperature, and (3) total pressure. As-deposited films are carbon free. Furthermore, only the tetragonal ZrO₂ phase was identified in as-deposited films. The tetragonal phase transformed progressively into the monoclinic phase as the films were subjected to high temperature post-deposition annealing. The optical properties of the ZrO₂ thin films as a function of wavelength, in the range of 200 nm to 2000 nm, were also reported. In addition, a simplified theoretical model which considers only a surface reaction was used to analyze the deposition of ZrO₂ film. The deposition rates can be predicted well for various deposition conditions in the hot wall reactor. The deposition rates of MOCVD Bi₄Ti₃O₁₂ were in the range of 3.9-12.5 nm/min. The Bi/Ti ratio was controlled by precursor temperature, carrier gas flow rate, and deposition temperature. As-deposited films were pure Bi₄Ti₃O₁₂ phase. The films were specular and showed uniform and fine-grain morphology. Optical constants as a function of wavelength were calculated from the film transmission characteristics in the UV-VIS-NIR region. The 550°C annealed film had a spontaneous polarization of 26.5 <i>μ</i>C/cm² and a coercive field of 244.3 kV/cm.en
dc.description.degreeMaster of Scienceen
dc.format.extentxi, 98 leavesen
dc.format.mediumBTDen
dc.format.mimetypeapplication/pdfen
dc.identifier.otheretd-12302008-063204en
dc.identifier.sourceurlhttp://scholar.lib.vt.edu/theses/available/etd-12302008-063204/en
dc.identifier.urihttp://hdl.handle.net/10919/46433en
dc.language.isoenen
dc.publisherVirginia Techen
dc.relation.haspartLD5655.V855_1993.S56.pdfen
dc.relation.isformatofOCLC# 29251164en
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subject.lccLD5655.V855 1993.S56en
dc.subject.lcshThin filmsen
dc.subject.lcshVapor-platingen
dc.titleMetalorganic chemical vapor deposition of metal oxidesen
dc.typeThesisen
dc.type.dcmitypeTexten
thesis.degree.disciplineMaterials Science and Engineeringen
thesis.degree.grantorVirginia Polytechnic Institute and State Universityen
thesis.degree.levelmastersen
thesis.degree.nameMaster of Scienceen

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