Insulated gate bipolar transistor (IGBT) simulation using IG-Spice

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dc.contributor.authorMitter, Chang Suen
dc.contributor.departmentElectrical Engineeringen
dc.date.accessioned2014-03-14T21:30:26Zen
dc.date.adate2010-03-02en
dc.date.available2014-03-14T21:30:26Zen
dc.date.issued1991en
dc.date.rdate2010-03-02en
dc.date.sdate2010-03-02en
dc.description.abstractA physics-based insulated gate bipolar transistor (IGBT) model has been successfully implemented into a widely available circuit simulation package, IG-Spice. Based on the semiconductor physics, the model accurately predicts the nonlinear junction capacitance variations, recombinations, and conductivity modulation of the power device. The procedure to incorporate the model into IG-Spice and various methods to ensure convergence are described. The IG-Spice IGBT model is presented, including all the physical effects which have been shown to be important in describing the device. Effectiveness of the model is shown by comparing the measured data for single device used in inductive load, and by comparing the static and dynamic current sharing of paralleled IGBTs. The simulated results are verified with experimental results. Accuracy is determined by the accuracy of the required parameters extracted.en
dc.description.degreeMaster of Scienceen
dc.format.extent177 leavesen
dc.format.mediumBTDen
dc.format.mimetypeapplication/pdfen
dc.identifier.otheretd-03022010-020115en
dc.identifier.sourceurlhttp://scholar.lib.vt.edu/theses/available/etd-03022010-020115/en
dc.identifier.urihttp://hdl.handle.net/10919/41315en
dc.language.isoenen
dc.publisherVirginia Techen
dc.relation.haspartLD5655.V855_1991.M577.pdfen
dc.relation.isformatofOCLC# 25404311en
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subject.lccLD5655.V855 1991.M577en
dc.subject.lcshBipolar transistorsen
dc.subject.lcshTransistorsen
dc.titleInsulated gate bipolar transistor (IGBT) simulation using IG-Spiceen
dc.typeThesisen
dc.type.dcmitypeTexten
thesis.degree.disciplineElectrical Engineeringen
thesis.degree.grantorVirginia Polytechnic Institute and State Universityen
thesis.degree.levelmastersen
thesis.degree.nameMaster of Scienceen

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