Polymer-Supported Bridges for Multi-Finger AlGaN/GaN Heterojunction Field Effect Transistors (HFETs)

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dc.contributor.authorWillemann, Michael Howarden
dc.contributor.committeechairGuido, Louis J.en
dc.contributor.committeememberAning, Alexander O.en
dc.contributor.committeememberLu, Guo-Quanen
dc.contributor.departmentMaterials Science and Engineeringen
dc.date.accessioned2014-03-14T20:44:19Zen
dc.date.adate2007-09-04en
dc.date.available2014-03-14T20:44:19Zen
dc.date.issued2007-08-17en
dc.date.rdate2007-09-04en
dc.date.sdate2007-08-27en
dc.description.abstractCurrent AlGaN/GaN Heterojunction Field Effect Transistors (HFETs) make use of multiple sources, drains, and gates in parallel to maximize transconductance and effective gain while minimizing the current density through each channel. To connect the sources to a common ground, current practice prescribes the fabrication of air bridges above the gates and drains. This practice has the advantage of a low dielectric constant and low parasitic capacitance, but it is at the expense of manufacturability and robust device operation. In the study described below, the air bridges in AlGaN/GaN HFETs were replaced by a polymer supported metallization bridge with the intention of improving ease of fabrication and reliability. The DC, high frequency, and power performance for several polymer step heights were investigated. The resultant structures were functional and robust; however, their electrical performance was degraded due to high source resistance. The cause of the high source resistance was found to be thinning of the metallization at the polymer step. The effect was more pronounced for higher step heights.en
dc.description.degreeMaster of Scienceen
dc.identifier.otheretd-08272007-085537en
dc.identifier.sourceurlhttp://scholar.lib.vt.edu/theses/available/etd-08272007-085537/en
dc.identifier.urihttp://hdl.handle.net/10919/34801en
dc.publisherVirginia Techen
dc.relation.haspartAbstract_TextFormat.txten
dc.relation.haspartComplete_Thesis_Version2.pdfen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectWide-bandgap semiconductoren
dc.subjectHigh Electron Mobility Transistoren
dc.subjectRF power electronicsen
dc.titlePolymer-Supported Bridges for Multi-Finger AlGaN/GaN Heterojunction Field Effect Transistors (HFETs)en
dc.typeThesisen
thesis.degree.disciplineMaterials Science and Engineeringen
thesis.degree.grantorVirginia Polytechnic Institute and State Universityen
thesis.degree.levelmastersen
thesis.degree.nameMaster of Scienceen

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