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Cascode GaN HEMT Gate Driving Analysis

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dc.contributor.authorHeumesser, V.en
dc.contributor.authorLai, J. S.en
dc.contributor.authorHsieh, H. C.en
dc.contributor.authorHsu, J.en
dc.contributor.authorYang, C. Y.en
dc.contributor.authorChang, E. Y.en
dc.contributor.authorLiu, C. Y.en
dc.contributor.authorChieng, W. H.en
dc.contributor.authorHsieh, Y. T.en
dc.date.accessioned2024-02-26T17:38:35Zen
dc.date.available2024-02-26T17:38:35Zen
dc.date.issued2023-01-01en
dc.description.abstractThe aim of this paper is to analyze the conventional cascode gate driving to understand the switching transition and to provide a design guide for the GaN HEMT and its associated packaging. A double-pulse tester has been designed and fabricated with minimum parasitic inductance to avoid unnecessary parasitic ringing. The switching behaviors in both turn-on and -off are analyzed through topological study and explained through SPICE simulation. Two different cascode devices were tested to show the impact of threshold voltage and low-voltage Si MOSFET selection.en
dc.description.versionPublished versionen
dc.format.extentPages 1-6en
dc.format.mimetypeapplication/pdfen
dc.identifier.doihttps://doi.org/10.1109/WiPDAAsia58218.2023.10261905en
dc.identifier.isbn9798350337112en
dc.identifier.orcidLai, Jih [0000-0003-2315-8460]en
dc.identifier.urihttps://hdl.handle.net/10919/118159en
dc.identifier.volume00en
dc.language.isoenen
dc.publisherIEEEen
dc.relation.urihttp://dx.doi.org/10.1109/wipdaasia58218.2023.10261905en
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.titleCascode GaN HEMT Gate Driving Analysisen
dc.title.serialWiPDA Asia 2023 - IEEE Workshop on Wide Bandgap Power Devices and Applications in Asiaen
dc.typeConference proceedingen
dc.type.dcmitypeTexten
dc.type.otherConference Proceedingen
pubs.finish-date2023-08-29en
pubs.organisational-group/Virginia Techen
pubs.organisational-group/Virginia Tech/Engineeringen
pubs.organisational-group/Virginia Tech/Engineering/Electrical and Computer Engineeringen
pubs.organisational-group/Virginia Tech/All T&R Facultyen
pubs.organisational-group/Virginia Tech/Engineering/COE T&R Facultyen
pubs.start-date2023-08-27en

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