Raman-scattering and optical studies of argon-etched GaAs surfaces

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dc.contributorVirginia Techen
dc.contributor.authorFeng, G. F.en
dc.contributor.authorZallen, Richard H.en
dc.contributor.authorEpp, June Miriamen
dc.contributor.authorDillard, John G.en
dc.contributor.departmentChemistryen
dc.contributor.departmentPhysicsen
dc.date.accessed2014-04-23en
dc.date.accessioned2014-05-07T15:37:04Zen
dc.date.available2014-05-07T15:37:04Zen
dc.date.issued1991-04en
dc.description.abstractWe have studied the structual damage in low-energy argon-ion-bombarded (ion-etched) GaAs using Raman scattering and ultraviolet reflectivity. When combined with post-bombardment sequential chemical etching, the Raman results reveal a graded depth profile of the damage layer, with a nearly linear damage dropoff with depth. The total damage-layer thickness is about 600 angstrom for high-fluence bombardment with 3.89-keV Ar+ ions. The spectral effects produced by argon etching are very different from those produced by high-energy ion implantation. The longitudinal-optic Raman line seen for argon-etched GaAs is not shifted and broadened as in ion-implanted GaAs. More striking are the results of the reflectivity measurements. For argon-etched GaAs, the electronic interband peaks are both broadened and strongly red shifted relative to the crystal peaks; for ion-implanted GaAs, only the broadening occurs. Distinct nanocrystals, which account for the effects seen in ion-implanted GaAs, are evidently absent in argon-etched GaAs. Instead, the damage layer caused by argon etching appears to be characterized by a very high density of point defects, which previous work suggests may be arsenic vacancies.en
dc.description.sponsorshipTexas Instrumentsen
dc.description.sponsorshipVirginia Center for Innovative Technologyen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationFeng, G. F.; Zallen, R.; Epp, J. M.; Dillard, J. G., "Raman-scattering and optical studies of argon-etched GaAs surfaces," Phys. Rev. B 43, 9678 DOI: http://dx.doi.org/10.1103/PhysRevB.43.9678en
dc.identifier.doihttps://doi.org/10.1103/PhysRevB.43.9678en
dc.identifier.issn0163-1829en
dc.identifier.urihttp://hdl.handle.net/10919/47877en
dc.identifier.urlhttp://journals.aps.org/prb/abstract/10.1103/PhysRevB.43.9678en
dc.language.isoenen
dc.publisherAmerican Physical Societyen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjection-implanted gaasen
dc.subjecttemperature-dependenceen
dc.subjectdamageen
dc.subjectsien
dc.subjectsiliconen
dc.subjectgeen
dc.subjectphysics, condensed matteren
dc.titleRaman-scattering and optical studies of argon-etched GaAs surfacesen
dc.title.serialPhysical Review Ben
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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