Development of Bi-Directional Module using Wafer-Bonded Chips

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dc.contributor.authorKim, Woochanen
dc.contributor.committeechairNgo, Khai D. T.en
dc.contributor.committeememberAgah, Masouden
dc.contributor.committeememberGuido, Louis J.en
dc.contributor.committeememberEkkad, Srinathen
dc.contributor.committeememberLu, Guo Quanen
dc.contributor.departmentElectrical and Computer Engineeringen
dc.date.accessioned2015-01-07T09:00:31Zen
dc.date.available2015-01-07T09:00:31Zen
dc.date.issued2015-01-06en
dc.description.abstractDouble-sided module exhibits electrical and thermal characteristics that are superior to wire-bonded counterpart. Such structure, however, induces more than twice the thermo-mechanical stress in a single-layer structure. Compressive posts have been developed and integrated into the double-sided module to reduce the stress to a level acceptable by silicon dice. For a 14 mm x 21 mm module carrying 6.6 mm x 6.6 mm die, finite-element simulation suggested an optimal design having four posts located 1 mm from the die; the z-direction stress at the chip was reduced from 17 MPa to 0.6 MPa.en
dc.description.degreePh. D.en
dc.format.mediumETDen
dc.identifier.othervt_gsexam:3944en
dc.identifier.urihttp://hdl.handle.net/10919/51170en
dc.publisherVirginia Techen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectDouble-sided dieen
dc.subjectwafer-bonded chipen
dc.subjecthourglass jointen
dc.subjectcompressive posten
dc.subjectmodule fabricationen
dc.subjectmodule characterizationen
dc.subjecthigh density integrationen
dc.subjectthermal managementen
dc.subjectthermo-mechanical stressen
dc.subjectreliability testen
dc.titleDevelopment of Bi-Directional Module using Wafer-Bonded Chipsen
dc.typeDissertationen
thesis.degree.disciplineElectrical Engineeringen
thesis.degree.grantorVirginia Polytechnic Institute and State Universityen
thesis.degree.leveldoctoralen
thesis.degree.namePh. D.en

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