Diode lasers with asymmetric barriers for 850 nm spectral range: experimental studies of power characteristics
dc.contributor.author | Zubov, Fedor I. | en |
dc.contributor.author | Zhukov, A. E. | en |
dc.contributor.author | Shernyakov, Y. M. | en |
dc.contributor.author | Maximov, Mikhail V. | en |
dc.contributor.author | Semenova, E. S. | en |
dc.contributor.author | Asryan, Levon V. | en |
dc.contributor.department | Materials Science and Engineering (MSE) | en |
dc.coverage.spatial | St Petersburg Acad Univ, St Petersburg, RUSSIA | en |
dc.date.accessioned | 2017-03-08T08:00:58Z | en |
dc.date.available | 2017-03-08T08:00:58Z | en |
dc.date.issued | 2015-01-01 | en |
dc.description.abstract | It is demonstrated that the use of asymmetric barrier layers in a waveguide of a diode laser suppress non-linearity of light-current characteristic and thus improve its power characteristics under high current injection. The results are presented for 850-nm AlGaAs/GaAs broad-area lasers with GaInP and AlInGaAs asymmetric barriers. | en |
dc.description.version | Published version | en |
dc.format.extent | 5 pages | en |
dc.format.mimetype | application/pdf | en |
dc.identifier.doi | https://doi.org/10.1088/1742-6596/643/1/012042 | en |
dc.identifier.issn | 1742-6588 | en |
dc.identifier.uri | http://hdl.handle.net/10919/75311 | en |
dc.identifier.volume | 643 | en |
dc.language.iso | en | en |
dc.publisher | IOP | en |
dc.relation.uri | http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000365252300041&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=930d57c9ac61a043676db62af60056c1 | en |
dc.rights | Creative Commons Attribution 3.0 Unported | en |
dc.rights.holder | The Author(s) | en |
dc.rights.uri | http://creativecommons.org/licenses/by/3.0/ | en |
dc.subject | Technology | en |
dc.subject | Engineering, Electrical & Electronic | en |
dc.subject | Nanoscience & Nanotechnology | en |
dc.subject | Physics, Multidisciplinary | en |
dc.subject | Engineering | en |
dc.subject | Science & Technology - Other Topics | en |
dc.subject | Physics | en |
dc.title | Diode lasers with asymmetric barriers for 850 nm spectral range: experimental studies of power characteristics | en |
dc.title.serial | 2nd International School And Conference Saint-Petersburg Open On Optoelectronics, Photonics, Engineering And Nanostructures (Spbopen2015) | en |
dc.type | Article - Refereed | en |
dc.type.dcmitype | Text | en |
dc.type.other | Proceedings Paper | en |
dc.type.other | Meeting | en |
dc.type.other | Book in series | en |
pubs.organisational-group | /Virginia Tech | en |
pubs.organisational-group | /Virginia Tech/All T&R Faculty | en |
pubs.organisational-group | /Virginia Tech/Engineering | en |
pubs.organisational-group | /Virginia Tech/Engineering/COE T&R Faculty | en |
pubs.organisational-group | /Virginia Tech/Engineering/Materials Science and Engineering | en |