Metallorganic chemical vapor deposition of lead oxide and lead titanate

dc.contributor.authorHendricks, Warren Charlesen
dc.contributor.committeechairDesu, Seshu B.en
dc.contributor.committeememberAning, Alexander O.en
dc.contributor.committeememberLu, Guo-Quanen
dc.contributor.departmentMaterials Science and Engineeringen
dc.date.accessioned2014-03-14T21:31:13Zen
dc.date.adate2009-03-12en
dc.date.available2014-03-14T21:31:13Zen
dc.date.issued1993-09-05en
dc.date.rdate2009-03-12en
dc.date.sdate2009-03-12en
dc.description.abstractThe purpose of this study was two-fold: firstly, the MOCVD deposition behavior of Pb(thd)2 was studied in detail and a one-dimensional kinetic model was proposed to successfully predict the effect of processing conditions on the deposition rate profile for PbO. Assuming the surface reaction is the rate-limiting step in the process, the effective activation energy for the process, Ea, was found to be 82 kJ/mol while the preexponential rate constant was found to be 33 g/cm2/min (0.15 moVcm2/min). The process was found to consistently produce a combination of the high temperature, orthorhombic modification of lead monoxide with randomly oriented plates of tetragonal lead monoxide. TEM electron diffraction was used to investigate the crystal orientation of the individual plates which was found to be in the plane normal to the <201> zone. Secondly, the deposition behavior of PbTi03 and the resulting film structure and properties were investigated. Pb(thd)2 was used in conjunction with titanium ethoxide (Ti(OEt)4) as a titanium source. Stoichiometric lead titanate films which were found to be smooth, specular and transparent, and well-adhered were deposited on a variety of substrates by careful control of the experimental conditions. Film structure, composition, and thickness were studied and correlated to changes in various experimental parameters. Additionally, a high temperature regime at which the film stoichiometry is relatively insensitive to experimental conditions was found to occur. The effects of post-annealing on the as-deposited films including compositional changes, morphological changes and crystal structure was also studied. Some problems were obtained with film peeling on the ruthenium oxide (Ru0₂)-coated substrates which could be alleviated somewhat by the use of (100) oriented silicon wafer rather than (111) oriented silicon; a possible mechanism to explain this behavior is also suggested. Optical properties were obtained using UV -VISNIR transmission and reflectance spectroscopy; the ferroelectric hysteresis behavior of the films was observed using standard R T -66 A test equipment.en
dc.description.degreeMaster of Scienceen
dc.format.extentxi, 118 leavesen
dc.format.mediumBTDen
dc.format.mimetypeapplication/pdfen
dc.identifier.otheretd-03122009-040926en
dc.identifier.sourceurlhttp://scholar.lib.vt.edu/theses/available/etd-03122009-040926/en
dc.identifier.urihttp://hdl.handle.net/10919/41492en
dc.language.isoenen
dc.publisherVirginia Techen
dc.relation.haspartLD5655.V855_1993.H462.pdfen
dc.relation.isformatofOCLC# 29551651en
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subject.lccLD5655.V855 1993.H462en
dc.subject.lcshLead oxidesen
dc.subject.lcshTitanatesen
dc.subject.lcshVapor-platingen
dc.titleMetallorganic chemical vapor deposition of lead oxide and lead titanateen
dc.typeThesisen
dc.type.dcmitypeTexten
thesis.degree.disciplineMaterials Science and Engineeringen
thesis.degree.grantorVirginia Polytechnic Institute and State Universityen
thesis.degree.levelmastersen
thesis.degree.nameMaster of Scienceen

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