Gate Driver Design and Device Characterization for 3.3 kV SiC MOSFET Modules

Simple item page
dc.contributor.authorGutierrez, Bryanen
dc.contributor.authorHou, Zhengmingen
dc.contributor.authorJiao, Dongen
dc.contributor.authorHsieh, Hsin-Cheen
dc.contributor.authorChen, XingRouen
dc.contributor.authorLiao, Hsuanen
dc.contributor.authorLai, Jih-Shengen
dc.contributor.authorYu, Ming-Hungen
dc.contributor.authorChen, Kuan-Wenen
dc.date.accessioned2025-03-10T17:53:19Zen
dc.date.available2025-03-10T17:53:19Zen
dc.date.issued2023-11-02en
dc.description.abstractA compact and 25-kV isolated gate driver with various protective features has been implemented for 3.3-kV SiC power modules. The gate driver design procedure for circuit production is described in detail. With the implemented gate driver, double pulse test (DPT) is performed to evaluate the switching energy losses and parasitic loop inductance at different voltage conditions. Additionally, the DPT together with Ansys Software are used to characterize the stray inductances.en
dc.description.notesYes, full paper (Peer reviewed?)en
dc.description.versionAccepted versionen
dc.format.extentPages 5983-5987en
dc.format.mimetypeapplication/pdfen
dc.identifier.doihttps://doi.org/10.1109/ECCE53617.2023.10362206en
dc.identifier.isbn9798350316445en
dc.identifier.orcidLai, Jih [0000-0003-2315-8460]en
dc.identifier.urihttps://hdl.handle.net/10919/124840en
dc.language.isoenen
dc.publisherIEEEen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.titleGate Driver Design and Device Characterization for 3.3 kV SiC MOSFET Modulesen
dc.title.serial2023 IEEE Energy Conversion Congress and Exposition, ECCE 2023en
dc.typeConference proceedingen
dc.type.dcmitypeTexten
dc.type.otherConference Proceedingen
pubs.finish-date2023-11-02en
pubs.organisational-groupVirginia Techen
pubs.organisational-groupVirginia Tech/Engineeringen
pubs.organisational-groupVirginia Tech/Engineering/Electrical and Computer Engineeringen
pubs.organisational-groupVirginia Tech/All T&R Facultyen
pubs.organisational-groupVirginia Tech/Engineering/COE T&R Facultyen
pubs.start-date2023-10-29en

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
ECCE2023_GateDriver_SiCModule.pdf
Size:
674.4 KB
Format:
Adobe Portable Document Format
Description:
Accepted version
Download
License bundle
Now showing 1 - 1 of 1
Name:
license.txt
Size:
1.5 KB
Format:
Plain Text
Description:
Download

Collections

All Faculty Deposits
Scholarly Works, Electrical and Computer Engineering