Characterization of high temperature creep in siliconized silicon carbide using ultrasonic techniques

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dc.contributor.authorButtram, Jonathan D.en
dc.contributor.committeechairDuke, John C. Jr.en
dc.contributor.committeememberStinchcomb, Wayne W.en
dc.contributor.committeememberCramer, Mark S.en
dc.contributor.departmentEngineering Science and Mechanicsen
dc.date.accessioned2014-03-14T21:31:04Zen
dc.date.adate2009-03-12en
dc.date.available2014-03-14T21:31:04Zen
dc.date.issued1990-04-04en
dc.date.rdate2009-03-12en
dc.date.sdate2009-03-12en
dc.description.abstractUltrasonic velocity and attenuation were both measured on samples containing various degrees of damage due to high temperature creep. These results were compared with parameters associated with creep damage such as strain and cavity formation, in order to better understand the mechanisms of creep in Si/SiC and to determine if ultrasonics can be used in evaluating the severity of damage. The data indicated that both ultrasonic velocity and attenuation are directly related to creep strain and can be used in evaluating creep damage. Ultrasonic velocity was found to be exponentially related to creep strain. Cavity formation was found not to significantly affect either of the measured ultrasonic properties. The results indicated that Si/SiC behaves as a two phase material in that high frequency ultrasound propagates primarily through the silicon carbide phase and not by the silicon phase.en
dc.description.degreeMaster of Scienceen
dc.format.mediumBTDen
dc.format.mimetypeapplication/pdfen
dc.identifier.otheretd-03122009-040453en
dc.identifier.sourceurlhttp://scholar.lib.vt.edu/theses/available/etd-03122009-040453/en
dc.identifier.urihttp://hdl.handle.net/10919/41448en
dc.language.isoenen
dc.publisherVirginia Techen
dc.relation.haspartLD5655.V855_1990.B988.pdfen
dc.relation.isformatofOCLC# 22397523en
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subject.lccLD5655.V855 1990.B988en
dc.subject.lcshCreep testing machines -- Researchen
dc.subject.lcshHigh temperaturesen
dc.titleCharacterization of high temperature creep in siliconized silicon carbide using ultrasonic techniquesen
dc.typeThesisen
dc.type.dcmitypeTexten
thesis.degree.disciplineEngineering Science and Mechanicsen
thesis.degree.grantorVirginia Polytechnic Institute and State Universityen
thesis.degree.levelmastersen
thesis.degree.nameMaster of Scienceen

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