dc.contributor.author	Li, Yanlong	en
dc.contributor.committeechair	Orlowski, Marius K.	en
dc.contributor.committeemember	Jia, Xiaoting	en
dc.contributor.committeemember	Lu, Guo-Quan	en
dc.contributor.committeemember	Khodaparast, Giti A.	en
dc.contributor.department	Electrical and Computer Engineering	en
dc.date.accessioned	2020-03-04T18:41:30Z	en
dc.date.available	2020-03-04T18:41:30Z	en
dc.date.issued	2020	en
dc.description.abstract	Recently, the resistance switching random access memory (ReRAM) in several MIM systems has been studied extensively for applications to the next generation non-volatile memory (NVM) devices and memristors since the scaling of conventional memories based on floating gate MOSFETs is getting increasingly difficult. ReRAM is being considered one of the most promising candidates for next generation non-volatile memory due to its relatively high switching speed, superior scalability, low power consumption, good retention and simple fabrication method. Cu/TaOX/Pt resistive switching device is a very good candidate due to its well performance and well characterization. However, since platinum (Pt) acting as the inert electrode is not economical efficient for industrial production, a compatible replacement of Pt is highly desirable. The device property of Co based resistive switching devices has been explored in this work. Compared with Pt devices, electric characterization of the fabricated Cu/TaOX/Co devices exhibits very similar FORM, SET and RESET voltages for Cu conductive filaments. However, for the oxygen vacancy (VO) filament the Co device has a significant smaller FORM, SET and RESET voltages of VO filament, which can be partly attributed to the work function difference between Pt and Co of 1.35 V and partly to the impaired integrity properties of Co vs Pt inert electrode. The limit of SET-RESET operations is mainly due to the geometrical shape of the Cu conductive filament is more cylindered rather than Cone-like shape as well as the high Joules heat dissipation. What’s more, ReRAM is also the most promising candidate for a flexible memory, as a variety of materials can be used both inorganics, organics and even hybrid nanocomposites. Besides inorganic ReRAM device, we also fabricated an organic ReRAM device with the structure Cu doped PANI-CSA/O-AA/Al. We have manufactured ReRAM based on Cu-doped PANI-CSA polymer electrode, O-AA as the polymer solid electrolyte and Al as the bottom electrode for the first time. This polymer device shows a significantly lower forming voltage than inorganic ReRAM devices such as Cu/TaOX/Pt. Our results also demonstrate that our organic ReRAM is a promising candidate for inexpensive candidate for inexpensive and environmentally friendly memory devices. We have demonstrated that the FORM operation of the polymer devices depends on the concentration of Cu+ ions as well as the thickness of the polymer electrode.	en
dc.description.abstractgeneral	Although the scaling of conventional memories such as volatile dynamic random access memory (DRAM) and non-volatile flash technology is becoming increasingly difficult, new types of non-volatile memories, such as resistive switching memories, have recently attracted the attention of both industry and academia. Resistive switching memory is considered as the next generation non-volatile memory because of its excellent scalability, high switching speed, simple structure and low power consumption. What’s more, ReRAM is also a promising candidate for a flexible memory, as a variety of materials can be used both inorganics, organics and even hybrid nanocomposites. ReRAM shows unique nanoionics based filamentary switching mechanism. Besides the nonvolatile memory applications, resistive switching devices implement the formation of a memristor, which is the fourth basic electrical component and can be used for neuromorphic computing. First, we report the device property of Co based resistive switching devices with a structure of Cu/TaOX/Co layers. The I-V characteristics of the manufactured Cu/TaOX/Co devices shows very similar FORM, SET and RESET voltages for Cu conductive filaments compared with Pt device. However, the Co device has a significant smaller FORM, SET and RESET voltages for oxygen vacancy (VO) filaments, which can be partly attributed to the work function difference between Pt and Co of 13.5 eV and partly to the impaired integrity properties of Co vs Pt inert electrode. The main reason for the limit of SET-RESET operations is that high Joules heat dissipation. With high Joules heat accumulation, the maximum switching cycles of Co devices is up to 8 times, while in the case of Pt cases, it is almost unlimited. Secondly, we fabricated an organic ReRAM device with the structure Cu-doped PANI-CSA/O-AA/Al. Cu-doped PANI-CSA polymer electrode has been introduced for the first time as the top polymer electrode of a ReRAM device. Compared to inorganic ReRAM device, this polymer device can be operated at a significantly lower forming voltage than inorganic devices such as Cu/TaOX/Pt. We have demonstrated that our organic ReRAM is a promising candidate for environmentally friendly and flexible memory devices. Our results demonstrate the FORM operation of the polymer devices depend on the concentration of Cu+ ions as well as the thickness of the polymer top layer.	en
dc.description.degree	M.S.	en
dc.format.medium	ETD	en
dc.identifier.uri	http://hdl.handle.net/10919/97191	en
dc.language.iso	en_US	en
dc.publisher	Virginia Tech	en
dc.rights	In Copyright	en
dc.rights.uri	http://rightsstatements.org/vocab/InC/1.0/	en
dc.subject	Resistive switching Random Access Memory (ReRAM)	en
dc.subject	Cobalt	en
dc.subject	Organic	en
dc.subject	PANI-CSA	en
dc.subject	Bottom electrode	en
dc.subject	reliability	en
dc.title	The Investigation of Inorganic Co Based ReRAM Devices and Organic Cu Doped PANI-CSA Top Electrode Based ReRAM Devices	en
dc.type	Thesis	en
thesis.degree.discipline	Electrical Engineering	en
thesis.degree.grantor	Virginia Polytechnic Institute and State University	en
thesis.degree.level	masters	en
thesis.degree.name	M.S.	en

The Investigation of Inorganic Co Based ReRAM Devices and Organic Cu Doped PANI-CSA Top Electrode Based ReRAM Devices

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