Carrier recombination dynamics and temperature dependent optical properties of InAs-GaSb heterostructures

Simple item page
dc.contributor.authorHudait, Mantu K.en
dc.contributor.authorJohnston, Steven W.en
dc.contributor.authorMeeker, Michaelen
dc.contributor.authorKhodaparast, Giti A.en
dc.date.accessioned2023-02-23T12:49:37Zen
dc.date.available2023-02-23T12:49:37Zen
dc.date.issued2022-11-04en
dc.date.updated2023-02-17T19:19:21Zen
dc.description.abstractHeterostructures with two dissimilar materials could offer unprecedented properties if one can carefully synthesize these heterostructures with atomically smooth interfaces and reduced number of recombination centers. InAs/GaSb-based heterostructures have technological importance for long wavelength infrared photodetectors if one can synthesize these materials with high-optical quality and high-carrier lifetime. In this work, the InAs/GaSb heterostructures with a different number of heterointerfaces and growth conditions were grown by solid source molecular beam epitaxy using valved cracker sources for both arsenic and antimony. Precise control of growth parameters and shutter sequences enabled abrupt InAs/GaSb heterointerfaces, as supported by a high-resolution transmission electron microscopic study. The temperature and power-dependent optical properties by photoluminescence (PL) spectroscopic analysis of InAs/GaSb heterostructures with 4 and 28 heterointerfaces displayed donor to the acceptor and the exciton bound to complex defects (VGaGaSb)0. Since the optical transition in PL measurements serves to determine the quality of the material, and the observed excitonic transitions from these InAs/GaSb heterostructures is an indication of high-quality materials. The high-carrier lifetimes of 139 ns to 185 ns from InAs/GaSb heterostructures were measured using microwave photoconductivity decay (μ-PCD) technique at room temperature. The observed increase in carrier lifetime is due to the decreasing number of Ga-related carrier recombination centers or defect complexes. This is further supported by the PL spectroscopic study. In addition, the carrier lifetime with different injection levels is supported by Shockley-Read-Hall recombination. Hence, these InAs/GaSb heterostructures with high-optical quality and high-carrier lifetimes would offer a path for the development of high-performance infrared photodetectors.en
dc.description.versionAccepted versionen
dc.format.extentPages 17994-18003en
dc.format.mimetypeapplication/pdfen
dc.identifier.doihttps://doi.org/10.1039/d2tc03443cen
dc.identifier.eissn2050-7534en
dc.identifier.issn2050-7526en
dc.identifier.issue47en
dc.identifier.orcidKhodaparast, Giti [0000-0002-1597-6538]en
dc.identifier.orcidHudait, Mantu [0000-0002-9789-3081]en
dc.identifier.urihttp://hdl.handle.net/10919/113916en
dc.identifier.volume10en
dc.language.isoenen
dc.publisherRoyal Society of Chemistryen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.titleCarrier recombination dynamics and temperature dependent optical properties of InAs-GaSb heterostructuresen
dc.title.serialJournal of Materials Chemistry Cen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten
dc.type.otherJournal Articleen
pubs.organisational-group/Virginia Techen
pubs.organisational-group/Virginia Tech/Scienceen
pubs.organisational-group/Virginia Tech/Science/Physicsen
pubs.organisational-group/Virginia Tech/Engineeringen
pubs.organisational-group/Virginia Tech/Engineering/Electrical and Computer Engineeringen
pubs.organisational-group/Virginia Tech/All T&R Facultyen
pubs.organisational-group/Virginia Tech/Engineering/COE T&R Facultyen
pubs.organisational-group/Virginia Tech/Science/COS T&R Facultyen

Files

Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
JMC-C Revised TC-ART-08-2022-003443 Clean Copy.pdf
Size:
2.79 MB
Format:
Adobe Portable Document Format
Description:
Accepted version
Download

Collections

All Faculty Deposits
Scholarly Works, Electrical and Computer Engineering
Scholarly Works, Physics