TBAL: Tunnel FET-Based Adiabatic Logic for Energy-Efficient, Ultra-Low Voltage IoT Applications

TR Number

Date

2019-01-07

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Journal ISSN

Volume Title

Publisher

IEEE

Abstract

Description

Keywords

Adiabatic logic, FinFETs, strained Ge/InGaAs heterojunctions, tunnel field-effect transistors, TBAL

Citation