TBAL: Tunnel FET-Based Adiabatic Logic for Energy-Efficient, Ultra-Low Voltage IoT Applications
TR Number
Date
2019-01-07
Journal Title
Journal ISSN
Volume Title
Publisher
IEEE
Abstract
Description
Keywords
Adiabatic logic, FinFETs, strained Ge/InGaAs heterojunctions, tunnel field-effect transistors, TBAL