TBAL: Tunnel FET-Based Adiabatic Logic for Energy-Efficient, Ultra-Low Voltage IoT Applications

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dc.contributor.authorLiu, Jheng-Sinen
dc.contributor.authorClavel, Michael B.en
dc.contributor.authorHudait, Mantu K.en
dc.contributor.departmentElectrical and Computer Engineeringen
dc.date.accessioned2019-07-24T17:19:13Zen
dc.date.available2019-07-24T17:19:13Zen
dc.date.issued2019-01-07en
dc.description.abstractA novel, tunnel field-effect transistor (TFET)-based adiabatic logic (TBAL) circuit topology has been proposed, evaluated and benchmarked with several device architectures (planar MOSFET, FinFET, and TFET) and AL implementations (efficient charge recovery logic, 2N-2N2P, positive feedback adiabatic logic) operating in the ultra-low voltage (0.3 V ≥ VDD ≤ 0.6 V) regime. By incorporating adiabatic logic functionality into standard combinational logic, an 80% reduction in energy/cycle was achieved. A further 80% reduction in energy/cycle was demonstrated by utilizing near broken-gap TFET devices and simultaneous scaling of supply voltage to 0.3 V, resulting in a 96% reduction in energy/cycle as compared to conventional Si CMOS. Extension of operating frequency beyond 10 MHz, coupled with sub-threshold circuit operation, shows the feasibility of TBAL for energy-efficient Internet of Things applications.en
dc.format.extent9 pagesen
dc.format.mimetypeapplication/pdfen
dc.identifier.doihttps://doi.org/10.1109/jeds.2019.2891204en
dc.identifier.urihttp://hdl.handle.net/10919/91972en
dc.identifier.volume7en
dc.language.isoenen
dc.publisherIEEEen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectAdiabatic logicen
dc.subjectFinFETsen
dc.subjectstrained Ge/InGaAs heterojunctionsen
dc.subjecttunnel field-effect transistorsen
dc.subjectTBALen
dc.titleTBAL: Tunnel FET-Based Adiabatic Logic for Energy-Efficient, Ultra-Low Voltage IoT Applicationsen
dc.title.serialJournal of the Electron Devices Societyen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten

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