Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications

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dc.contributor.authorKundu, Souviken
dc.contributor.authorMaurya, Deepamen
dc.contributor.authorClavel, Michael B.en
dc.contributor.authorZhou, Yuanen
dc.contributor.authorHalder, Nripendra N.en
dc.contributor.authorHudait, Mantu K.en
dc.contributor.authorBanerji, Pallaben
dc.contributor.authorPriya, Shashanken
dc.contributor.departmentElectrical and Computer Engineeringen
dc.contributor.departmentCenter for Energy Harvesting Materials and Systems (CEHMS)en
dc.contributor.departmentMechanical Engineeringen
dc.date.accessioned2017-02-10T23:50:34Zen
dc.date.available2017-02-10T23:50:34Zen
dc.date.issued2015-02-16en
dc.description.abstractWe introduce a novel lead-free ferroelectric thin film (1-x)BaTiO3-xBa(Cu1/3Nb2/3)O3 (x 5 0.025) (BT-BCN) integrated on to HfO2 buffered Si for non-volatile memory (NVM) applications. Piezoelectric force microscopy (PFM), x-ray diffraction, and high resolution transmission electron microscopy were employed to establish the ferroelectricity in BT-BCN thin films. PFMstudy reveals that the domains reversal occurs with 1806 phase change by applying external voltage, demonstrating its effectiveness forNVMdevice applications. X-ray photoelectron microscopy was used to investigate the band alignments between atomic layer deposited HfO2 and pulsed laser deposited BT-BCN films. Programming and erasing operations were explained on the basis of band-alignments. The structure offers large memory window, low leakage current, and high and low capacitance values that were easily distinguishable even after ,106 s, indicating strong charge storage potential. This study explains a new approach towards the realization of ferroelectric based memory devices integrated on Si platform and also opens up a new possibility to embed the system within current complementary metal-oxide-semiconductor processing technology.en
dc.description.versionPublished versionen
dc.format.extent? - ? (10) page(s)en
dc.format.mimetypeapplication/pdfen
dc.identifier.doihttps://doi.org/10.1038/srep08494en
dc.identifier.issn2045-2322en
dc.identifier.urihttp://hdl.handle.net/10919/74993en
dc.identifier.volume5en
dc.language.isoenen
dc.publisherNature Publishing Groupen
dc.relation.urihttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000349359600005&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=930d57c9ac61a043676db62af60056c1en
dc.rightsCreative Commons Attribution 4.0 Internationalen
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.subjectprecise determinationen
dc.subjectfilmsen
dc.subjectmicroscopyen
dc.subjectdynamicsen
dc.subjectsi(100)en
dc.subjectsurfaceen
dc.titleIntegration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applicationsen
dc.title.serialScientific Reportsen
dc.typeArticle - Refereeden
dc.type.dcmitypeTexten
pubs.organisational-group/Virginia Techen
pubs.organisational-group/Virginia Tech/All T&R Facultyen
pubs.organisational-group/Virginia Tech/Engineeringen
pubs.organisational-group/Virginia Tech/Engineering/COE T&R Facultyen
pubs.organisational-group/Virginia Tech/Engineering/Electrical and Computer Engineeringen
pubs.organisational-group/Virginia Tech/Engineering/Mechanical Engineeringen
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