Dynamically corrected gates in silicon singlet-triplet spin qubits
| dc.contributor.author | Walelign, Habitamu Y. | en |
| dc.contributor.author | Cai, Xinxin | en |
| dc.contributor.author | Li, Bikun | en |
| dc.contributor.author | Barnes, Edwin | en |
| dc.contributor.author | Nichol, John M. | en |
| dc.date.accessioned | 2025-02-18T13:17:51Z | en |
| dc.date.available | 2025-02-18T13:17:51Z | en |
| dc.date.issued | 2024-12-10 | en |
| dc.description.abstract | Fault-tolerant quantum computation requires low physical-qubit gate errors. Many approaches exist to reduce gate errors, including both hardware- and control-optimization strategies. Dynamically corrected gates are designed to cancel specific errors and offer the potential for high-fidelity gates, but they have yet to be implemented in singlet-triplet spin qubits in semiconductor quantum dots, due in part to the stringent control constraints in these systems. In this work, we experimentally implement dynamically corrected gates designed to mitigate hyperfine noise in a singlet-triplet qubit realized in a Si/SiGe double quantum dot. The corrected gates reduce infidelities by about a factor of 3, resulting in gate fidelities above 0.99 for both identity and Hadamard gates. The gate performances depend sensitively on pulse distortions, and their specific performance reveals an unexpected distortion in our experimental setup. | en |
| dc.description.version | Accepted version | en |
| dc.format.extent | 11 page(s) | en |
| dc.format.mimetype | application/pdf | en |
| dc.identifier | ARTN 064029 (Article number) | en |
| dc.identifier.doi | https://doi.org/10.1103/PhysRevApplied.22.064029 | en |
| dc.identifier.eissn | 2331-7019 | en |
| dc.identifier.issn | 2331-7019 | en |
| dc.identifier.issue | 6 | en |
| dc.identifier.uri | https://hdl.handle.net/10919/124630 | en |
| dc.identifier.volume | 22 | en |
| dc.language.iso | en | en |
| dc.publisher | American Physical Society | en |
| dc.rights | In Copyright | en |
| dc.rights.uri | http://rightsstatements.org/vocab/InC/1.0/ | en |
| dc.title | Dynamically corrected gates in silicon singlet-triplet spin qubits | en |
| dc.title.serial | Physical Review Applied | en |
| dc.type | Article - Refereed | en |
| dc.type.dcmitype | Text | en |
| dc.type.other | Article | en |
| dc.type.other | Journal | en |
| dcterms.dateAccepted | 2024-11-06 | en |
| pubs.organisational-group | Virginia Tech | en |
| pubs.organisational-group | Virginia Tech/Science | en |
| pubs.organisational-group | Virginia Tech/Science/Physics | en |
| pubs.organisational-group | Virginia Tech/All T&R Faculty | en |
| pubs.organisational-group | Virginia Tech/Science/COS T&R Faculty | en |