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Large-signal characterization and modeling of nonlinear devices using scattering parameters

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dc.contributor.authorCall, John B.en
dc.contributor.committeechairDavis, William A.en
dc.contributor.committeememberSweeney, Dennis G.en
dc.contributor.committeememberStutzman, Warren L.en
dc.contributor.departmentElectrical and Computer Engineeringen
dc.date.accessioned2014-03-14T20:47:18Zen
dc.date.adate2002-11-07en
dc.date.available2014-03-14T20:47:18Zen
dc.date.issued2002-09-13en
dc.date.rdate2003-11-07en
dc.date.sdate2002-10-31en
dc.description.abstractCharacterization and modeling of devices at high drive levels often requires specialized equipment and measurement techniques. Many large-signal devices will never have traditional nonlinear models because model development is expensive and time-consuming. Due to the complexity of the device or the size of the application market, nonlinear modeling efforts may not be cost effective. Scattering parameters, widely used for small-signal passive and active device characterization, have received only cursory consideration for large-signal nonlinear device characterization due to technical and theoretical issues. We review the theory of S-parameters, active device characterization, and previous efforts to use S-parameters with large-signal nonlinear devices. A robust, calibrated vector-measurement system is used to obtain device scattering parameters as a function of drive level. The unique measurement system architecture allows meaningful scattering parameter measurements of large-signal nonlinear devices, overcoming limitations reported by previous researchers. A three-port S-parameter device model, with a nonlinear reflection coefficient terminating the third port, can be extracted from scattering parameters measured as a function of drive level. This three-port model provides excellent agreement with device measurements across a wide range of drive conditions. The model is used to simulate load-pull data for various drive levels which are compared to measured data.en
dc.description.degreeMaster of Scienceen
dc.identifier.otheretd-10312002-202143en
dc.identifier.sourceurlhttp://scholar.lib.vt.edu/theses/available/etd-10312002-202143/en
dc.identifier.urihttp://hdl.handle.net/10919/35548en
dc.publisherVirginia Techen
dc.relation.haspartjbcall_thesis_sparmodel.pdfen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectmicrowave measurementen
dc.subjectload-pullen
dc.subjectblack box modelen
dc.subjectS-parametersen
dc.titleLarge-signal characterization and modeling of nonlinear devices using scattering parametersen
dc.typeThesisen
thesis.degree.disciplineElectrical and Computer Engineeringen
thesis.degree.grantorVirginia Polytechnic Institute and State Universityen
thesis.degree.levelmastersen
thesis.degree.nameMaster of Scienceen

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