Design and Verification of a High Voltage, Capacitance Voltage Measurement System for Power MOSFETs

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dc.contributor.authorRalston, Parrish Elaineen
dc.contributor.committeechairMeehan, Kathleenen
dc.contributor.committeememberLai, Jih-Shengen
dc.contributor.committeememberRaman, Sanjayen
dc.contributor.committeememberBostian, Charles W.en
dc.contributor.committeememberHendrix, Roberten
dc.contributor.committeememberAgah, Masouden
dc.contributor.departmentElectrical and Computer Engineeringen
dc.date.accessioned2014-03-14T20:49:59Zen
dc.date.adate2009-01-08en
dc.date.available2014-03-14T20:49:59Zen
dc.date.issued2008-12-12en
dc.date.rdate2009-01-08en
dc.date.sdate2008-12-15en
dc.description.abstractThere is a need for a high voltage, capacitance voltage (HV, CV) measurement system for the measurement and characterization of silicon carbide (SiC) power MOSFETs. The following study discusses the circuit layout and automation software for a measurement system that can perform CV measurements for all three MOSFET capacitances, CGS, CDS, and CGD. This measurement system can perform low voltage (0–40V) and high voltage (40–5kV) measurements. Accuracy of the measurement system can be safely and effectively adjusted based on the magnitude of the MOSFET capacitance. An IRF1010N power MOSFET, a CoolMos, and a prototype SiC power MOSFET are all measured and their results are included in this study. All of the results for the IRF1010N and the CoolMos can be verified with established characteristics of power MOSFET capacitance. Results for the SiC power MOSFET prove that more testing and further development of SiC MOSFET fabrication is needed.en
dc.description.degreeMaster of Scienceen
dc.identifier.otheretd-12152008-172537en
dc.identifier.sourceurlhttp://scholar.lib.vt.edu/theses/available/etd-12152008-172537/en
dc.identifier.urihttp://hdl.handle.net/10919/36169en
dc.publisherVirginia Techen
dc.relation.haspartParrishRalston_MastersThesis.pdfen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectpower electronicsen
dc.subjectpower MOSFETen
dc.subjectcapacitanceen
dc.subjectsilicon carbideen
dc.subjectcapacitance voltage measurementsen
dc.titleDesign and Verification of a High Voltage, Capacitance Voltage Measurement System for Power MOSFETsen
dc.typeThesisen
thesis.degree.disciplineElectrical and Computer Engineeringen
thesis.degree.grantorVirginia Polytechnic Institute and State Universityen
thesis.degree.levelmastersen
thesis.degree.nameMaster of Scienceen

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