Characterization and Application of Wide-Band-Gap Devices for High Frequency Power Conversion
| dc.contributor.author | Liu, Zhengyang | en |
| dc.contributor.committeechair | Lee, Fred C. | en |
| dc.contributor.committeemember | Ha, Dong S. | en |
| dc.contributor.committeemember | Li, Qiang | en |
| dc.contributor.committeemember | Wicks, Alfred L. | en |
| dc.contributor.committeemember | Centeno, Virgilio A. | en |
| dc.contributor.department | Electrical and Computer Engineering | en |
| dc.date.accessioned | 2017-06-09T08:00:16Z | en |
| dc.date.available | 2017-06-09T08:00:16Z | en |
| dc.date.issued | 2017-06-08 | en |
| dc.description.abstract | Advanced power semiconductor devices have consistently proven to be a major force in pushing the progressive development of power conversion technology. The emerging wide-band-gap (WBG) material based power semiconductor devices are considered as gaming changing devices which can exceed the limit of silicon (Si) and be used to pursue groundbreaking high-frequency, high-efficiency, and high-power-density power conversion. The switching performance of cascode GaN HEMT is studied at first. An accurate behavior-level simulation model is developed with comprehensive consideration of the impacts of parasitics. Then based on the simulation model, detailed loss breakdown and loss mechanism analysis are studied. The cascode GaN HEMT has high turn-on loss due to the reverse recovery charge and junction capacitor charge, and the common source inductance (CSI) of the package; while the turn-off loss is extremely small attributing to unique current source turn off mechanism of the cascode structure. With this unique feature, the critical conduction mode (CRM) soft switching technique is applied to reduce the dominant turn on loss and significantly increase converter efficiency. The switching frequency is successfully pushed to 5MHz while maintaining high efficiency and good thermal performance. Traditional packaging method is becoming a bottle neck to fully utilize the advantages of GaN HEMT. So an investigation of the package influence on the cascode GaN HEMT is also conducted. Several critical parasitic inductance are identified, which cause high turn on loss and high parasitic ringing that may lead to device failure. To solve the issue, the stack-die package is proposed to eliminate all critical parasitic inductance, and as a result, reducing turn on loss by half and avoiding potential failure mode of the cascode GaN device effectively. Utilizing soft switching and enhanced packaging, a GaN-based MHz totem-pole PFC rectifier is demonstrated with 99% peak efficiency and 700 W/in3 power density. The switching frequency of the PFC is more than ten times higher than the state-of-the-art industry product while it achieves best possible efficiency and power density. Integrated power module and integrated PCB winding coupled inductor are all studied and applied in this PFC. Furthermore, the technology of soft switching totem-pole PFC is extended to a bidirectional rectifier/inverter design. By using SiC MOSFETs, both operating voltage and power are dramatically increased so that it is successfully applied into a bidirectional on-board charger (OBC) which achieves significantly improved efficiency and power density comparing to the best of industrial practice. In addition, a novel 2-stage system architecture and control strategy are proposed and demonstrated in the OBC system. As a continued extension, the critical mode based soft switching rectifier/inverter technology is applied to three-phase AC/DC converter. The inherent drawback of critical mode due to variable frequency operation is overcome by the proposed new modulation method with the idea of frequency synchronization. It is the first time that a critical mode based modulation is demonstrated in the most conventional three phase H-bridge AC/DC converter, and with 99% plus efficiency at above 300 kHz switching frequency. | en |
| dc.description.abstractgeneral | Power electronics and power conversion are enabling technologies for almost any applications that are powered by electricity. It is very widely used in consumer electronics, household and industrial appliances, automobiles, utilities, infrastructures, and etc. It is essential but at the same time people want it to be invisible. Therefore the development of power electronics is consistently moving toward high efficiency (less and less energy waste), high density (small volume and less weight), high reliability, and low cost. Thanks to the development of silicon (Si) based semiconductor technology, especially silicon based power semiconductor devices, a great amount of achievements had been made in last three decades. However such high speed progress probably cannot be maintained for any longer since Si-based power devices are approaching their glass ceiling (theoretical limit) of what can be ultimately achieved. That is why people are looking for power devices made with material different than Si but with greater potential. Gallium Nitride (GaN) and Silicon Carbide (SiC) based power devices are chosen due to its great potential. It is believed to outperform Si-based devices by 2-3 orders which means power converters made with GaN and/or SiC can be even more efficient, smaller and lighter, more reliable, and of course with less cost. The most important approach to achieve such objective is high switching frequency. In order to turn the vision into reality, there are a lot of technology barriers in front of us, which in summary are how to understand the device and how to use the device into real applications with efficient high frequency operation. Therefore the major achievement of this work is comprehensive evaluation of GaN devices, and then demonstration of GaN and SiC in several AC/DC power converters for different applications. In the evaluation of GaN devices, an accurate simulation model was built and verified. Then based on the assistance of the model, switching loss mechanism is elaborated. The major conclusion is GaN has large turn on loss and very small turn off loss so that soft switching, which at least achieves zero-voltage-switching (ZVS) turn on, is important for GaN. Packaging related issues are addressed as well including analysis of package impacts on device performance and a new proposal of advanced package. It is very proud to claim that the proposal now are widely used by GaN device manufacturers into their real commercial products. After the know-how of how to use GaN was built, the potential of GaN was demonstrated in several different applications. The focus of this dissertation is on its application in AC/DC rectifier/inverter. Critical mode based totem-pole rectifier/inverter were built for 1 kW server power, 6.6 kW on board charger, and 25 kW solar inverter. A series of challenges were identified and the corresponding solutions were proposed. Today, the proposed design is becoming a benchmark and many of the industrial people are adopting our technology and applying it into real high performance products. | en |
| dc.description.degree | Ph. D. | en |
| dc.format.medium | ETD | en |
| dc.identifier.other | vt_gsexam:11092 | en |
| dc.identifier.uri | http://hdl.handle.net/10919/77959 | en |
| dc.publisher | Virginia Tech | en |
| dc.rights | In Copyright | en |
| dc.rights.uri | http://rightsstatements.org/vocab/InC/1.0/ | en |
| dc.subject | Gallium nitride | en |
| dc.subject | high frequency | en |
| dc.subject | soft switching | en |
| dc.subject | package | en |
| dc.subject | rectifier/inverter | en |
| dc.title | Characterization and Application of Wide-Band-Gap Devices for High Frequency Power Conversion | en |
| dc.type | Dissertation | en |
| thesis.degree.discipline | Electrical Engineering | en |
| thesis.degree.grantor | Virginia Polytechnic Institute and State University | en |
| thesis.degree.level | doctoral | en |
| thesis.degree.name | Ph. D. | en |
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