Characterization, Reliability and Packaging for 300 °C MOSFET
| dc.contributor.author | Nam, David | en |
| dc.contributor.committeechair | Burgos, Rolando | en |
| dc.contributor.committeemember | DiMarino, Christina | en |
| dc.contributor.committeemember | Lu, Guo-Quan | en |
| dc.contributor.department | Electrical and Computer Engineering | en |
| dc.date.accessioned | 2021-09-02T13:12:59Z | en |
| dc.date.available | 2021-09-02T13:12:59Z | en |
| dc.date.issued | 2020-03-06 | en |
| dc.description.abstract | Silicon carbide (SiC) is a wide bandgap material capable of higher voltage and higher temperature operation compared to its silicon (Si) counterparts due to its higher critical electric field (E-field) and higher thermal conductivity. Using SiC, MOSFETs with a theoretical high temperature operation and reliability is achievable. However, current bottlenecks in high temperature SiC MOSFETs lie within the limitations of standard packaging. Additionally, there are reliability issues relating to the gate oxide region of the MOSFET, which is exacerbated through high temperature conditions. In this thesis, high temperature effects on current-generation SiC MOSFETs are studied and analyzed. To achieve this, a high temperature package is created to achieve reliable operation of a SiC MOSFET at junction temperatures of 300 °C. The custom, high temperature package feasibility is verified through studying trends in SiC MOSFET behavior with increasing temperature up to 300 °C by static characterization. Additionally, the reliability of SiC MOSFETs at 300 °C is tested with accelerated lifetime bias tests. | en |
| dc.description.abstractgeneral | Electrical devices that are rated for high temperature applications demand a use of a material that is stable and reliable at the elevated temperatures. Silicon carbide (SiC) is such a material. Devices made from SiC are able to switch faster, have a superior efficiency, and are capable of operating at extreme temperatures much better than the currently widely used silicon (Si) devices. There are limitations on SiC certain structures of SiC devices, such as the metal oxide semiconductor field effect transistor (MOSFET), have inherent reliability issues related to the fabrication of the device. These reliability issues can get worse over higher temperature ranges. Therefore, studies must be made to determine the feasibility of SiC MOSFETs in high temperature applications. To do so, industry standard tests are conducted on newer generation SiC MOSFETs to ascertain their use for said conditions. | en |
| dc.description.degree | M.S. | en |
| dc.format.medium | ETD | en |
| dc.format.mimetype | application/pdf | en |
| dc.identifier.uri | http://hdl.handle.net/10919/104896 | en |
| dc.language.iso | en | en |
| dc.publisher | Virginia Tech | en |
| dc.rights | Creative Commons Attribution-NonCommercial-ShareAlike 4.0 International | en |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-sa/4.0/ | en |
| dc.subject | silicon carbide | en |
| dc.subject | reliability | en |
| dc.subject | high temperature | en |
| dc.subject | characterization | en |
| dc.subject | packaging | en |
| dc.title | Characterization, Reliability and Packaging for 300 °C MOSFET | en |
| dc.type | Thesis | en |
| thesis.degree.discipline | Electrical Engineering | en |
| thesis.degree.grantor | Virginia Polytechnic Institute and State University | en |
| thesis.degree.level | masters | en |
| thesis.degree.name | M.S. | en |