Electrical Characterization of Ruthenium Dioxide Schottky Contacts on GaN

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dc.contributor.authorAllen, Noah P.en
dc.contributor.committeechairGuido, Louis J.en
dc.contributor.committeememberAning, Alexen
dc.contributor.committeememberLu, G.Q.en
dc.contributor.departmentElectrical and Computer Engineeringen
dc.date.accessioned2017-06-13T19:43:46Zen
dc.date.adate2015-01-19en
dc.date.available2017-06-13T19:43:46Zen
dc.date.issued2014-12-09en
dc.date.rdate2015-01-19en
dc.date.sdate2014-12-23en
dc.description.abstractA film which is optically transparent and electrically conductive is difficult to come by but can be realized in ways such as doping an oxidized film or by oxidizing a metallic film resulting in what is known as a transparent conducting oxide (TCO). TCO's have many important uses in electronics, especially as the top contact in to solar cells where efficient transmission of light and low electrical resistivity allow for higher efficiency solar cells and as the gate contact in AlGaN/GaN HFET's allowing for optical characterization of the subsurface transistor properties. Because these devices rely heavily on the characteristics of its material interfaces, a detailed analysis should be done to investigate the electrical effects of implementing a TCO. In this work, the electrical characterization of ruthenium dioxide (RuO₂) Schottky contacts to gallium nitride (GaN) formed by evaporating ruthenium with a subsequent open-air annealing is presented. The results gathered from the current-voltage-temperature and the capacitance-voltage relationships were compared to ruthenium (Ru) on GaN and platinum (Pt) on GaN. Additionally, the measurement and analysis procedure was qualified on a similar structure of nickel on GaAs due to its well-behave nature and presence in the literature. The results indicate that an inhomogeneous Gaussian distribution of barrier heights exists at the RuO₂/GaN interface with an increase of 83meV in the mean barrier height when compared to Ru/GaN.en
dc.description.degreeMaster of Scienceen
dc.identifier.otheretd-12232014-112417en
dc.identifier.sourceurlhttp://scholar.lib.vt.edu/theses/available/etd-12232014-112417/en
dc.identifier.urihttp://hdl.handle.net/10919/78078en
dc.language.isoen_USen
dc.publisherVirginia Techen
dc.rightsIn Copyrighten
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/en
dc.subjectI-Ven
dc.subjectRuthenium Dioxideen
dc.subjectElectrical Characterizationen
dc.subjectGaNen
dc.subjectSchottkyen
dc.titleElectrical Characterization of Ruthenium Dioxide Schottky Contacts on GaNen
dc.typeThesisen
dc.type.dcmitypeTexten
thesis.degree.disciplineElectrical and Computer Engineeringen
thesis.degree.grantorVirginia Polytechnic Institute and State Universityen
thesis.degree.levelmastersen
thesis.degree.nameMaster of Scienceen

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