Effect of pressure on defect-related emission in heavily silicon-doped GaAs
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Date
1994-11
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Journal ISSN
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Publisher
American Physical Society
Abstract
We report cryogenic high-pressure measurements of a defect-related emission at 1.25 eV in silicon-doped GaAs. The pressure measurements prove that the 1.25-eV photon energy is relative to the conduction band, implying a deep defect level 0.30 eV above the valence band and an electron-capture process from the conduction band into the defect. The defect level moves up in the band gap at a rate of 23±3 meV/GPa. These results are consistent with a vacancy-related defect level, possibly stemming from a gallium-vacancy–silicon-at-gallium (second-nearest-neighbor) defect complex.
Description
Keywords
hydrostatic-pressure, gallium-arsenide, deep donors, dx center, photoluminescence, dependence, el2, si, physics, condensed matter
Citation
Holtz, M.; Sauncy, T.; Dallas, T.; Massie, S., "Effect of pressure on defect-related emission in heavily silicon-doped GaAs," Phys. Rev. B 50, 14706(R) DOI: http://dx.doi.org/10.1103/PhysRevB.50.14706