Spin and phase coherence measured by antilocalization in n-InSb thin films

Files

TR Number

Date

2009-02-25

Journal Title

Journal ISSN

Volume Title

Publisher

American Physical Society

Abstract

The spin and phase coherence times of the itinerant electrons in n-InSb thin films were experimentally determined by analyzing the low-temperature magnetoresistance in antilocalization theory. The results indicate a very weak temperature dependence below 10 K for the spin coherence time. The dependence of the spin coherence time on carrier density demonstrates that the Elliott-Yafet mechanism is predominantly responsible for electron-spin relaxation in n-type InSb at low temperatures. The phase coherence time follows an inverse temperature dependence, in accordance with the electron-electron Nyquist dephasing mechanism.

Description

Keywords

band model of magnetism, carrier density, electron spin polarisation, indium compounds, localised states, magnetoresistance, narrow band gap, semiconductors, Nyquist criterion, semiconductor thin films, weak-field magnetoresistance, electron scattering, localization, semiconductors, surface, system, behavior, sensors, Physics

Citation

Kallaher, R. L. ; Heremans, J. J., Feb 2009. "Spin and phase coherence measured by antilocalization in n-InSb thin films," PHYSICAL REVIEW B 79(7): 075322. DOI: 10.1103/PhysRevB.79.075322